Asymmetric anisotropic magnetoresistance in epitaxial Fe3O4 thin films

Chen, B.L.; Ding, Zhaofeng; Ma, Danhao; Li, Junxue; Xiao, Xia; Wu, Y. Z.

doi:10.1016/j.physleta.2015.05.006

Cited by 5 publications

(2 citation statements)

References 35 publications

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“…2.3 however it should be noted that in single crystalline films, where the angular dependence of AMR may differ from Eq. 2.4, the angular dependence of SR may differ from Table 4 [79][80][81][82][83][84][85].…”

Section: Angular Dependencementioning

confidence: 86%

“…2.4 may not be appropriate for single crystalline films due to the band structure influence on AMR [79]. In such samples AMR can exhibit additional four-fold symmetry [80][81][82][83], asymmetric behaviour [84], and strong dependence on the angle between the current and crystalline axis [80][81][82][83][84][85]. In both poly and single crystalline films typically ∆R > 0 [86], although there are exceptions [79,87], and while the effect of AMR is small compared to GMR or TMR in multilayer structures, in monolayers AMR is the dominate effect and is typically as large as a few percent, although this depends on, amongst other factors, the material, sample geometry and temperature [79], for example as the film thickness decreases, AMR decreases [88].…”

Section: Anisotropic Magnetoresistancementioning

confidence: 99%

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Electrical detection of magnetization dynamics via spin rectification effects

2016

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The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro-and nano-structured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook formate easy to be used for analyzing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

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Section: Angular Dependencementioning

confidence: 86%

Section: Anisotropic Magnetoresistancementioning

confidence: 99%

Electrical detection of magnetization dynamics via spin rectification effects

2016

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Strong current-direction dependence of anisotropic magnetoresistance in single crystalline Fe/GaAs(1 1 0) films

Zeng

Zhou

Jia

et al. 2020

Journal of Magnetism and Magnetic Materials

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Four-fold symmetric anisotropic magnetoresistance of single-crystalline Ni(001) film

Xiao

Ding

et al. 2015

Journal of Applied Physics

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Temperature, current-direction, and film-thickness dependent anisotropic magnetoresistance measurements were performed on single-crystalline face-centered-cubic nickel films. An additional four-fold symmetry was confirmed besides the typical two-fold term even at room temperature. The angular-dependent longitudinal resistivity resolves into a two-fold term, which varies as a function of current direction, and a four-fold term, which is isotropically independent of current direction. The experimental results are interpreted well using an expression based on the phenomenological model. Both the two- and four-fold terms vary inversely proportional to film thickness, indicating that interfacial scattering can significantly influence the spin-dependent transport properties.

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Asymmetric anisotropic magnetoresistance in epitaxial Fe3O4 thin films

Cited by 5 publications

References 35 publications

Electrical detection of magnetization dynamics via spin rectification effects

Electrical detection of magnetization dynamics via spin rectification effects

Strong current-direction dependence of anisotropic magnetoresistance in single crystalline Fe/GaAs(1 1 0) films

Four-fold symmetric anisotropic magnetoresistance of single-crystalline Ni(001) film

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