Asteroid and ALFA programs: to equip Europe with high performance IR detectors for space applications

Pichon, Thibault; Badano, G.; Bounab, Ayoub; Delisle, Cyrille; Fièque, B.; Gravrand, O.; Horeau, B.; Lamoure, Adrien; Lobre, C.; Lortholary, M.; Moreau, Vincent; Mulet, P.; Orduna, T.; Provost, Léna; Sam-Giao, Diane; Tellier, Olivier; Boulade, O.

doi:10.1117/12.2630213

Cited by 2 publications

(1 citation statement)

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“…Many evolutions of the technology have been performed since those first achievements, for different purposes: performances enhancement to lower 1/f noise contribution, reduction of defective pixels for HOT applications in mid and long wavelength [3][4], short [5][6] [7] and very long wavelength [8] [9] array manufacturing for space applications. This technology has demonstrated all its capabilities to address many different applications.…”

Section: Introductionmentioning

confidence: 99%

Small pixel pitch MCT P on N MWIR photodiodes at DEFIR: towards 7.5um and beyond with very high image quality

Baier

Gravrand

LeGoff

et al. 2023

Infrared Technology and Applications XLIX

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MCT p-on-n photodiodes manufactured at Lynred and CEA-LETI have demonstrated state of the art performances for HOT applications. On blue and red mid infrared bands on 15μm pixel pitch, respectively 150 and 130K operating temperatures have been obtained, due to diffusion limited dark current and low defectivity. To achieve equivalent results on smaller pixel, the p-on-n technology at DEFIR, joint laboratory between Lynred and CEA-LETI, has been improved. The technological process was modified to ensure a proper diode formation and to efficiently passivate the interface between MCT and encapsulation layers, especially in the vicinity of the space charge region. The manufactured arrays with a 5.3μm cutoff wavelength have been hybridized on a digital output SXGA (1280×1024) direct injection ROIC with a pixel pitch of 7.5 μm. This paper present the measured current, blackbody responsivity and RMS noise on FPAs with F/4 numerical aperture. We will also discuss spectral response, quantum efficiency, shot-noise limited photodiodes and noise histograms shapes and their distribution tails at 130K. The very low number of defective pixel allow to address higher operating temperature and measurements have been performed at 140K and even 150K with very limited performance degradation. Pixel pitch of 5 μm has been characterized on test chips and present I-V curves with low dispersion and long bias plateau. As for larger pixel sizes, these photodiodes are shot-noise limited. Modulation transfer function has been measured by electron beam induced current and presents high value, up to 56%.

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