2009
DOI: 10.1016/j.nimb.2009.01.134
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Assessment of swift-ion damage by RBS/C: Determination of the amorphization threshold

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Cited by 11 publications
(9 citation statements)
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“…This initial slowgrow region is followed by a rapidly growing stage, which finally slows down. It should be noted that the increase observed in the second region is far higher than the one expected for the linear zone above S e IS th > 2.7 [42] (orange 1 dashed line); a similar effect has been also observed in LiNb0 3 [43]. A new extrapolation with Szenes' model of the rapidly increasing stage suggests the existence of a second threshold at around 4.1 keV/nm (Fig.…”
Section: Tablesupporting
confidence: 67%
“…This initial slowgrow region is followed by a rapidly growing stage, which finally slows down. It should be noted that the increase observed in the second region is far higher than the one expected for the linear zone above S e IS th > 2.7 [42] (orange 1 dashed line); a similar effect has been also observed in LiNb0 3 [43]. A new extrapolation with Szenes' model of the rapidly increasing stage suggests the existence of a second threshold at around 4.1 keV/nm (Fig.…”
Section: Tablesupporting
confidence: 67%
“…In particular, a non-radiative excitondecay model has been recently developed [15,16], that describes amorphization as a defect-driven transition from a crystalline to an amorphous phase when the local radiation-induced defect concentration reaches a critical value. Within those cumulative models every ion impact is expected to produce an inner amorphous core surrounded by a defective halo [17][18][19] when the electronic stopping power overcomes a certain threshold that generates such critical defect concentration. Below threshold only a halo (defective region) should be produced without causing amorphization.…”
Section: Introductionmentioning
confidence: 99%
“…For LiNbO 3 , direct quantitative RBS/C data on the size of the defective halo are not very reliable since the de-channelling effect of the halo is quite small in comparison with that of the amorphous core [9]. However, slightly above the threshold, the halo area may represent around 10-20% of the core area and below the threshold (although the amorphous core is not formed) a defective region (defective halo) is still clearly detectable.…”
Section: Of Amorphization As a Results Of Irradiationinduced Defect Acmentioning
confidence: 99%
“…It has now become clear that heavy damage and amorphization can be produced in dielectric and semiconductor crystals by bombarding them with swift ions through electronic excitation mechanisms [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. This electronic excitation damage presents remarkable differential features in comparison with that induced by elastic nuclear collisions and implantation [7,8,10].…”
Section: Introductionmentioning
confidence: 99%