We report the effect of δ doping at the LaAlO 3 /SrTiO 3 interface with LaMnO 3 monolayers on the photoconducting (PC) state. The PC is realized by exposing the samples to broadband optical radiation of a quartz lamp and 325 and 441 nm lines of a He-Cd laser. Along with the significant modification in electrical transport which drives the pure LaAlO 3 /SrTiO 3 interface from metal-to-insulator with increasing LaMnO 3 sub-monolayer thickness, we also observe an enhancement in the photoresponse and relaxation time constant. A possible scenario for the PC based on defect clusters, random potential fluctuations, and large lattice relaxation models, along with the role of structural phase transition in SrTiO 3 , is discussed. For pure LaAlO 3 /SrTiO 3 , the photoconductivity appears to originate from interband transitions between Ti-derived 3d bands which are e g in character and O 2p-Ti t 2g hybridized bands. The band structure changes significantly when fractional layers of LaMnO 3 are introduced. Here the Mn e g bands (≈1.5 eV above the Fermi energy) within the photoconducting gap lead to a reduction in the photoexcitation energy and a gain in overall photoconductivity.