Assessment of Partial Discharges in the Air by Application of Corona Camera

Abstract

This paper reports the results of the analysis of measurements involving partial discharges (PD) occurring in the air using a corona camera (UV camera). The measurements were carried out in laboratory conditions and applied two electrode systems: needle–needle and needle–plate, in order to obtain various electric field distributions. The measurements of PDs, including a variety of alternatives, were carried out using a portable UV camera, taking into account the impact of the camera gain parameter and its distance from the PD sources. As a result, some important regularities and characteristics were identified that could significantly affect the ability to assess PDs by application of UV camera measurements. In addition, the results obtained can be employed for non-invasive diagnostic measurements performed on working power equipment and may be useful in further work on standardizing the result interpretation method obtained from measurements using a UV camera.

Application of Image Sensors to Detect and Locate Electrical Discharges: A Review

“…They are mostly used to inspect high-voltage infrastructure [ 111 ]. Most of these cameras are based on CCD sensors [ 112 ] or CMOS sensors [ 113 ] because they have been shown to be sensitive enough to detect weak corona discharges [ 114 ], so dual-spectra UV-visible cameras have been extensively used to detect corona discharges [ 115 , 116 ]. It is known that there is a correlation between the observed optical energy and the energy loss due to corona discharges [ 117 ].…”

Synthesis and Characterization of High‐Quality Ta2O5 Nanoparticles for Highly Selective SAW‐Based DUV Sensor and Corona Detection Application

“…Wide-bandgap materials possess bandgaps that are considerably larger than the 3.4 eV bandgap of gallium nitride (GaN), [1][2][3] making them particularly well-suited for solar-blind DUV photodetection and corona discharge detection. [4][5][6][7][8][9] Meanwhile, most recently DUV photodetectors based on molybdenum sulfide (MoS 2 )/GaN p-n heterojunction, [10] Ga 2 O 3 , [1,[11][12][13] Zn 2 GeO 4 Nanowire, [14] lutetium oxide (Lu 2 O 3 ), [15] p-MnO/n-GaN, [16] indium-galliumzinc-oxide (IGZO) thin film [17] have been extensively studied. But some of the materials have limitations like complex synthesis, high-temperature process requirements, defect states, and stability issues.…”