Assessment of CuO thin films for its suitablity as window absorbing layer in solar cell fabrications

Shabu, R.; Raj, A. Moses Ezhil; Sanjeeviraja, C.; Ravidhas, C.

doi:10.1016/j.materresbull.2015.03.016

Cited by 91 publications

(34 citation statements)

References 59 publications

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“…Hydrogen is widely used in industries, as a power source in aerospace, for metal sintering and annealing, in research laboratories, biomedical systems, automotive and transportation equipment, etc. [1][2][3][4][5][6][7][8] Therefore, the reliable, selective and fast detection of hydrogen gas leaks appears to be the strict necessity for preventing the accumulation of hydrogen in air (4% H 2 ). 6 In this context nano-and microstructures of p-type materials and especially the n-type semiconducting oxides have been intensively investigated over the past few decades due to their remarkable gas sensing properties, and importance for fundamental research and applied technologies.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, characterization and DFT studies of zinc-doped copper oxide nanocrystals for gas sensing applications

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Synthesis, characterization and DFT studies of zinc-doped copper oxide nanocrystals for gas sensing applications

et al. 2016

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“…As expected, the resulting CuO thin films exhibit: low and strong absorption in the visible region for thin films made with S 1 and S 2 respectively; however, it declines after 800nm to the extent that the transparency is considerable from 900nm to 1100nm. These are the basic characteristics of a solar selective absorber [9]. In order to appreciate the gap energy of CuO thin films, first, the experimental data were extracted and reformed to absorption coefficient (α) via equation 1 [10.11] as follows: (1) knowing that: t: Thickness R: Reflectance T: Transmittance Taking into account that the thickness t is of the order nano meter, the gap energy Eg and the absorption coefficient α can be calculated according to the relation of Tauc (2).…”

Section: Optical Characterizationmentioning

confidence: 99%

“…All the apparent atomic planes show the formation of the CuO phase with monoclinic crystalline structure. The diffraction peaks (002) and (111) of CuO were high in the process of increasing the thickness of the thin layer due to the increase in precursor concentration [19].…”

Section: Xrd Characterizationmentioning

confidence: 99%

A Copper Oxide (CuO) Thin Films Deposited by Spray Pyrolysis Method

et al. 2019

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A simple and low-cost procedure (spray pyrolysis) was used to elaborate a copper oxide thin films on ordinary glass substrates. A copper nitrate was used and dissolved in two different solutions (Water, Methanol) S1 and S2 respectively in order to obtain an equal concentration; CS1,S2=0.5M. The spray pyrolysis deposition made at fixed temperature T=500°C and different volumes of S1 or S2 on the glass substrates. The X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectrophotometry were used to determinate the structural, morphological and optical properties of CuO thin films. The X-ray diffraction patterns confirm the presence of the polycrystalline phase of CuO as monoclinic crystal structure with preferential orientation along (110), (002), (111), (200) and (020). Their optical band gaps ranged from 3.95 to 4.02eV for thin films made with S1, and from 1.6 to 1.95eV for thin films made with S2 with a high absorbency in the visible region, which is in agreement with the values of the literature.

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“…As expected from the CuO thin films, the resulting films exhibit a strong absorption in the visible region; however, it declines after 800nm to the extent that the transparency is considerable in the range of 900nm to 1100nm. These are the basic characteristics of a proper solar selective absorber 25 . In order to estimate the bandgap of the CuO thin films, first, the transmittance (T) and reflectance (R) experimental data were converted to the absorption coefficient (α) via the following equation: (4) where t is thickness 3,26 .…”

Section: Electrical Propertiesmentioning

confidence: 99%

Spray Deposited Nanostructured CuO Thin Films: Influence of Substrate Temperature and Annealing Process

Asl

Rozati

2018

Mat. Res.

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In this study, CuO thin films were deposited on glass substrates at a wide range of temperatures from 450ºC to 550ºC with steps of 25ºC by chemical spray pyrolysis technique. Aiming to investigate the effect of annealing process, one of the resulting films was annealed at 450ºC for 3 hours under ambient air. Based on X-ray diffraction, all the resulting films are monoclinic with two prominent peaks at ~36º and ~39º. The crystallite size of the CuO film deposited at 450ºC was found to be the largest in comparison with the others. As the substrate temperature increased, a gradual change was observed for the CuO thin film surface morphology and in the case of annealed film, the grains and their boundaries became indistinguishable. The resistivity of the films was reduced by virtue of increasing the substrate temperature and also, both the mobility and carrier concentration of the annealed film were improved drastically after annealing. As expected, the CuO thin films absorption was considerable in the visible region and gradually declined after 800nm. The estimated band gap value of the CuO film deposited at 450ºC were fairly close to the optimum band gap for solar applications.

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Assessment of CuO thin films for its suitablity as window absorbing layer in solar cell fabrications

Cited by 91 publications

References 59 publications

Synthesis, characterization and DFT studies of zinc-doped copper oxide nanocrystals for gas sensing applications

Synthesis, characterization and DFT studies of zinc-doped copper oxide nanocrystals for gas sensing applications

A Copper Oxide (CuO) Thin Films Deposited by Spray Pyrolysis Method

Spray Deposited Nanostructured CuO Thin Films: Influence of Substrate Temperature and Annealing Process

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