2019 IEEE 2nd 5G World Forum (5GWF) 2019
DOI: 10.1109/5gwf.2019.8911632
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Assessment of a Thick-Oxide Transistor from the 22FDX® Platform for 5G NR sub-6 GHz FEMs

Quang Huy Le
1
,
Dang Khoa Huynh
2
,
Defu Wang
3
et al.
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Cited by 5 publications
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Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications

Abdulazhanov,
Le,
Khoa Huynh
et al. 2023
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
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Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications

Abdulazhanov,
Le,
Khoa Huynh
et al. 2023
ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
0
0
0
0
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Empirical Large-Signal Modeling of mm-Wave FDSOI CMOS Based on Angelov Model

Le
1
,
Huynh
2
,
Lehmann
3
et al. 2021
IEEE Trans. Electron Devices
10
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Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22nm FDSOI Technology

Le
1
,
Huynh
2
,
Lehmann
3
et al. 2022
2021 16th European Microwave Integrated Circuits Conference (EuMIC)
2
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