1996
DOI: 10.1109/23.510745
|View full text |Cite
|
Sign up to set email alerts
|

Assessment of a new p-MOSFET usable as a doserate insensitive gamma dose sensor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

1
5
0

Year Published

2006
2006
2019
2019

Publication Types

Select...
7
1

Relationship

2
6

Authors

Journals

citations
Cited by 24 publications
(7 citation statements)
references
References 7 publications
1
5
0
Order By: Relevance
“…A standard deviation of 1.0 mV/Gy was obtained for this dose rate range. This value is similar to that of previous studies [26].…”
Section: Dose Rate Dependencesupporting
confidence: 83%
“…A standard deviation of 1.0 mV/Gy was obtained for this dose rate range. This value is similar to that of previous studies [26].…”
Section: Dose Rate Dependencesupporting
confidence: 83%
“…Another compensation method involves setting the drain current at the point where the effect of temperature fluctuations is expected to be minimal, that is, where the temperature coefficient is zero. This point is called the ZTC point and the current is denoted as I ZTC (O'Sullivan et al 1990, Buehler et al 1993, Vettese et al 1996, Tsividis 1999, Kimoto et al 2003. Another thermal compensation method is based on differential measurements of the source-drain voltage of two identical MOSFETs.…”
Section: Introductionmentioning
confidence: 99%
“…The MOSFET itself is not significantly influenced by neutrons (Vettesse et al, 1996) and the response if any is mainly due to the interaction of neutrons with the packaging (Rosenfeld et al, 1995;Ravotti et al, 2005). However when covered with a converter it can be used as a neutron dosemeter (Kronenberg and Bruker, 1995;Lee et al, 2004;Price et al, 2004).…”
Section: Introductionmentioning
confidence: 98%