Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics

Wijesekara, Anuradha V.; Varagnolo, Silvia; Dabera, G. Dinesha M. R.; Marshall, Kenneth P.; Pereira, H. Jessica; Hatton, Ross A.

doi:10.1038/s41598-018-33987-7

Cited by 14 publications

(11 citation statements)

References 33 publications

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“…Similar results have been reported for other organic functionalised surfaces [ 65 , 66 , 67 , 68 ]. These calculated work functions compare closely with experimental measurements, which report the Φ of CuSCN in the range of 5.0–5.4 eV [ 69 , 70 , 71 , 72 ]. Wijesekara et al [ 70 ] reported the work function of CuSCN thick film to be 4.82 eV.…”

Section: Resultssupporting

confidence: 83%

“…These calculated work functions compare closely with experimental measurements, which report the Φ of CuSCN in the range of 5.0–5.4 eV [ 69 , 70 , 71 , 72 ]. Wijesekara et al [ 70 ] reported the work function of CuSCN thick film to be 4.82 eV. Dzikri et al [ 71 ] and Kim et al [ 72 ] reported the work functions of 5.53 and 5.4 eV, respectively.…”

Section: Resultssupporting

confidence: 83%

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Electronic Structure and Surface Properties of Copper Thiocyanate: A Promising Hole Transport Material for Organic Photovoltaic Cells

et al. 2020

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Considering the significance of hexagonal copper thiocyanate (β-CuSCN) in several optoelectronic technologies and applications, it is essential to investigate its electronic structure and surface properties. Herein, we have employed density functional theory (DFT) calculations to characterise the band structure, density of states, and the energy-dependent X-ray photoelectron (XPS) valence band spectra at variable excitation energies of β-CuSCN. The surface properties in the absence and presence of dimethyl sulfoxide (DMSO), a solvent additive for improving perovskite solar cells’ power conversion efficiency, have also been systematically characterised. β-CuSCN is shown to be an indirect band gap material (Eg = 3.68 eV) with the valence band edge demonstrated to change from being dominated by Cu-3d at soft X-ray ionisation photon energies to Cu-3p at hard X-ray ionisation photon energies. The adsorption energy of dimethyl sulfoxide (DMSO) on the (100) and (110) β-CuSCN surfaces is calculated at −1.12 and −0.91 eV, respectively. The presence of DMSO on the surface is shown to have a stabilisation effect, lowering the surface energy and tuning the work function of the β-CuSCN surfaces, which is desirable for organic solar cells to achieve high power conversion efficiencies.

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Section: Resultssupporting

confidence: 83%

Section: Resultssupporting

confidence: 83%

Electronic Structure and Surface Properties of Copper Thiocyanate: A Promising Hole Transport Material for Organic Photovoltaic Cells

et al. 2020

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“…Additionally, DES and dipropyl sulfide do not dissolve most organic molecules, making CuSCN ideal for processing on top of the active layers. 16 , 35 …”

Section: Introductionmentioning

confidence: 99%

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Liang

Firdaus

Kang

et al. 2022

ACS Appl. Mater. Interfaces

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Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 10 18 cm –3 . The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at −1 V, and an external quantum efficiency of 5.14 × 10 2 % under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.

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“…Due to the above disadvantages, the CsSnI 3 -based optoelectronic devices are also suffering from poor device performance, which would thus require further developments. Although there are a few works on CsSnI 3 -based photovoltaics [15,[23][24][25][26], photodetectors [27,28], and other optoelectronic devices [29], great efforts are still needed to further address the above disadvantages, aiming for exploring high-performance CsSnI 3 -based optoelectronic devices with the improved stability.…”

Section: Introductionmentioning

confidence: 99%

Nanorod-like nanocrystalline CsSnI3 and CNT composite thin film–based hybrid photodetector

Howlader

Zheng

2022

emergent mater.

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An experimental detail on the morphology engineering and characterizations of the all-inorganic Sn-based perovskite (here CsSnI3) thin films and their application in photodetectors are presented. In particular, we demonstrated that the chlorobenzene anti-solvent treatment during thin-film spin coating could effectively optimize the morphology properties of the obtained CsSnI3 thin film. SEM and AFM measurements showed the uniform thin film with nanorod-like nanocrystalline morphology. In addition, EDS and XPS measurements confirmed the low level of oxidation of the thin film, indicating good ambient stability. A planar photodetector was also made with the prepared thin film, and electrical characteristics were taken. The dark current and photocurrent were found in the range of 10−9 A and 10−7 A, respectively, with an on/off ratio of 102. The photoresponsivity was 10−5 AW−1. A further experiment was conducted to make composite thin films between CsSnI3 and CNTs for additional morphological engineering. The SEM measurement and Raman mapping manifested the nanonet-like morphology of the composite thin film. The quenching of the photoluminescence curve indicated the efficient photo-generated carrier extraction from the CsSnI3 matrix to CNTs. The absorption spectra also showed enhanced absorption ability of the prepared composite thin film. A hybrid photodetector made from the composite thin film showed dark current and photocurrent in the range of 10−6 A and 10−4 A, respectively, with an on/off ratio of 102. The photoresponsivity was 10−2 AW−1. Due to the combination of the CNTs with CsSnI3, the photoresponsivity increased 1000 times. At the same time, the hysteresis of the hybrid photodetector also reduced significantly compared to the pristine CsSnI3-based photodetector.

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Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics

Cited by 14 publications

References 33 publications

Electronic Structure and Surface Properties of Copper Thiocyanate: A Promising Hole Transport Material for Organic Photovoltaic Cells

Electronic Structure and Surface Properties of Copper Thiocyanate: A Promising Hole Transport Material for Organic Photovoltaic Cells

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Nanorod-like nanocrystalline CsSnI3 and CNT composite thin film–based hybrid photodetector

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