Design and Process Integration for Microelectronic Manufacturing III 2005
DOI: 10.1117/12.598063
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Assessing the impact of real world manufacturing lithography variations on post-OPC CD control

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Cited by 5 publications
(3 citation statements)
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“…There are multiple sources of residual errors in models, and model inaccuracies are only one of several factors which contribute to errors in the final wafer image after mask correction [1]. One significant class of modeling error is related to how the illumination source is represented.…”
Section: Introductionmentioning
confidence: 99%
“…There are multiple sources of residual errors in models, and model inaccuracies are only one of several factors which contribute to errors in the final wafer image after mask correction [1]. One significant class of modeling error is related to how the illumination source is represented.…”
Section: Introductionmentioning
confidence: 99%
“…Their analysis is based on OPC with the nominal process. It is expected that the difference in consideration of process variations would be even more [24]. Statistical simulation techniques are demonstrated to map the lithography variability to CD or chip timing [25,26].…”
Section: Introductionmentioning
confidence: 99%
“…The analysis of [24] is based on OPC with the nominal process. It is expected that the difference with consideration of process variations would be even more [20]. Statistical simulation techniques are demonstrated to map the lithography variability to CD or chip timing [2,17].…”
Section: Introductionmentioning
confidence: 99%