Assembly of cerium-based coordination polymer into variant polycrystalline 2D–3D CeO_2−x nanostructures

Abstract

The present work reports a simple and rapid disassembly/reassembly approach at room temperature to tailor functional metal oxides of 2D and 3D architectures.

Decoupling the Impacts of Engineering Defects and Band Gap Alignment Mechanism on the Catalytic Performance of Holey 2D CeO2−x‐Based Heterojunctions

“…Table S11 in the Supporting Information reveals a reasonable correlation between the peak positions for the samples, which were fabricated by precipitation and self‐propagating synthesis and those for the samples of the present work, which were fabricated by electrodeposition to produce a CP, followed by oxidation. [ 61 ] However, an aspect of PL that does not appear to have been considered is the potential for the formation and transition between color centers, the energies of which are associated with the formation of midgap states. [ 62 ] Consequently, speculative alternative assignments for the major PL peaks are proposed in Table S12 in the Supporting Information.…”

Design strategies for ceria nanomaterials: untangling key mechanistic concepts

“…In conclusion, the preparation of alternative Pourbaix diagrams for different anionic ligands and precipitating agents can illustrate the effects of different chemical species on the sizes and locations of the Ce(OH) 4 and Ce(OH) 3 predominance regions (in the stability range in water), thereby predicting the potential for the formation of solid Ce(OH) 4 or Ce(OH) 3 and the required pH conditions. Fig.…”

“…Ceria (CeO 2 ) is a wide band gap semiconductor of considerable importance through its multifarious uses in catalysis, [1][2][3][4] photocatalysis, 5,6 energy storage, 7 energy conversion, 2,8,9 gas sensing, 3 and health. 10 Most of these applications depend on the oxygen storage capacity of what effectively is CeO 2Àx .…”

Recent advances of metal telluride anodes for high-performance lithium/sodium–ion batteries

“…49,50 Point defects forming at the surface of the anode materials are the most critical one. 51–53 Point defects such as vacancy will disturb the surrounding atoms to some extent and cause lattice distortion of crystal materials, which can improve their conductivity and the diffusion coefficient by effectively regulating the electronic structure. 53–56 Wang et al 57 synthesized hierarchical SnS 2 microspheres with S vacancy through a one-step solvothermal process.…”

“…51–53 Point defects such as vacancy will disturb the surrounding atoms to some extent and cause lattice distortion of crystal materials, which can improve their conductivity and the diffusion coefficient by effectively regulating the electronic structure. 53–56 Wang et al 57 synthesized hierarchical SnS 2 microspheres with S vacancy through a one-step solvothermal process. DFT computations reveal that the abundance of S vacancies could effectively decrease the band gap and improve its conductivity.…”