Aspects of Thin-Film Superlattice Thermoelectric Materials, Devices, and Applications

Böttner, H.; Chen, Gang; Venkatasubramanian, R.

doi:10.1557/mrs2006.47

Cited by 243 publications

(167 citation statements)

References 53 publications

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“…In the following we choose A 0 = (10 nm) 2 , that is, we consider, for example, an array of nanowires with one singlemode nanowire every 10 nm (a very high density 32 ). Note that no such scaling is needed for efficiency comparisons, where cross sections drop out.…”

Section: Comparison and Discussionmentioning

confidence: 99%

Thermoelectric efficiency at maximum power in low-dimensional systems

2010

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Low-dimensional electronic systems in thermoelectrics have the potential to achieve high thermalto-electric energy conversion efficiency. A key measure of performance is the efficiency when the device is operated under maximum power conditions. Here we study the efficiency at maximum power of three low-dimensional, thermoelectric systems: a zero-dimensional quantum dot (QD) with a Lorentzian transmission resonance of finite width, a one-dimensional (1D) ballistic conductor, and a thermionic (TI) power generator formed by a two-dimensional energy barrier. In all three systems, the efficiency at maximum power is independent of temperature, and in each case a careful tuning of relevant energies is required to achieve maximal performance. We find that quantum dots perform relatively poorly under maximum power conditions, with relatively low efficiency and small power throughput. Ideal one-dimensional conductors offer the highest efficiency at maximum power (36% of the Carnot efficiency). Whether 1D or TI systems achieve the larger maximum power output depends on temperature and area filling factor. These results are also discussed in the context of the traditional figure of merit ZT .

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Section: Comparison and Discussionmentioning

confidence: 99%

Thermoelectric efficiency at maximum power in low-dimensional systems

2010

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“…Standard strategies for other thermoelectric materials for lattice thermal conductivity reduction include alloying, construction of superlattices, nanoinclusions, or grain boundaries. 10,[15][16][17][18][19][20][21][22] In addition, Sc is naturally isotope-pure and ScN thus lacks, with the exception of the small effect of 0.4% 15 N, 23 isotope reduction of thermal conductivity. Consequently, the possibilities to substantially reduce the thermal conductivity by alloying or nanostructure engineering are particularly promising in this material.…”

Section: à3mentioning

confidence: 99%

Phase stability of ScN-based solid solutions for thermoelectric applications from first-principles calculations

Kerdsongpanya

Alling

Eklund

2013

Journal of Applied Physics

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We have used first-principles calculations to investigate the trends in mixing thermodynamics of ScN-based solid solutions in the cubic B1 structure. 13 different Sc1−xMxN (M = Y, La, Ti, Zr, Hf, V, Nb, Ta, Gd, Lu, Al, Ga, In) and three different ScN1−xAx (A = P, As, Sb) solid solutions are investigated and their trends for forming disordered or ordered solid solutions or to phase separate are revealed. The results are used to discuss suitable candidate materials for different strategies to reduce the high thermal conductivity in ScN-based systems, a material having otherwise promising thermoelectric properties for medium and high temperature applications. Our results indicate that at a temperature of T = 800 °C, Sc1−xYxN; Sc1−xLaxN; Sc1−xGdxN, Sc1−xGaxN, and Sc1−xInxN; and ScN1−xPx, ScN1−xAsx, and ScN1−xSbx solid solutions have phase separation tendency, and thus, can be used for forming nano-inclusion or superlattices, as they are not intermixing at high temperature. On the other hand, Sc1−xTixN, Sc1−xZrxN, Sc1−xHfxN, and Sc1−xLuxN favor disordered solid solutions at T = 800 °C. Thus, the Sc1−xLuxN system is suggested for a solid solution strategy for phonon scattering as Lu has the same valence as Sc and much larger atomic mass.

Funding Agencies|Swedish Research Council (VR)|621-2009-5258621-2012-4430621-2011-4417|Linnaeus Strong Research Environment LiLi-NFM||Swedish Foundation for Strategic Research||Linkoping Center in Nanoscience and technology (CeNano)||

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“…In recent years nano-structuring concepts [3,4] enable higher values for ZT by increasing the numerator, called power factor PF = σ S 2 , or decreasing the denominator of Eq. 1.…”

Section: Introductionmentioning

confidence: 99%

Lorenz Function of Bi2Te3/Sb2Te3 Superlattices

Hinsche

Mertig

Zahn

2012

Journal of Elec Materi

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Combining first principles density functional theory and semi-classical Boltzmann transport, the anisotropic Lorenz function was studied for thermoelectric Bi 2 Te 3 /Sb 2 Te 3 superlattices and their bulk constituents. It was found that already for the bulk materials Bi 2 Te 3 and Sb 2 Te 3 , the Lorenz function is not a pellucid function on charge carrier concentration and temperature. For electron-doped Bi 2 Te 3 /Sb 2 Te 3 superlattices large oscillatory deviations for the Lorenz function from the metallic limit were found even at high charge carrier concentrations. The latter can be referred to quantum well effects, which occur at distinct superlattice periods.

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Aspects of Thin-Film Superlattice Thermoelectric Materials, Devices, and Applications

Cited by 243 publications

References 53 publications

Thermoelectric efficiency at maximum power in low-dimensional systems

Thermoelectric efficiency at maximum power in low-dimensional systems

Phase stability of ScN-based solid solutions for thermoelectric applications from first-principles calculations

Lorenz Function of Bi2Te3/Sb2Te3 Superlattices

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