ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

Khandelwal, Sourabh; Chauhan, Yogesh Singh; Fjeldly, Tor A.; Ghosh, Sudip; Pampori, Ahtisham; Mahajan, Dhawal; Dangi, Raghvendra; Ahsan, Sheikh Aamir

doi:10.1109/ted.2018.2867874

Cited by 110 publications

(35 citation statements)

References 22 publications

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“…In the last decade, physics-based models of AlGaN/GaN HFETs have been the primary focus of many researchers. Based on calculated surface potential, the ASM model has been developed for industry application [1][2][3][4]. At the same time, the traditional physical models derivate from mobility-velocity relation, which has been previously researched and its results studied [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics

Yang

Lv²,

Lin

et al. 2020

Electronics

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A physics-based model for the output current–voltage (I–V) characteristics of AlGaN/GaN HFETs is developed based on AlGaAs/GaAs HFETs. It is demonstrated that Polarization Coulomb Field (PCF) scattering greatly influences channel electron mobility. With different gate biases, channel electron mobility is varied by PCF scattering. Furthermore, a more negative gate bias and a lower ratio of lg/lsd (gate length/source-drain space) of the device causes the PCF scattering to have stronger influence on channel electron mobility. This work is the first to apply PCF scattering to a physics-based model for AlGaN/GaN HFETs with I–V characteristics and the results indicate that PCF scattering is essential for a physics-based model to identify I–V characteristics of AlGaN/GaN HFETs.

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Section: Introductionmentioning

confidence: 99%

Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics

Yang

Lv²,

Lin

et al. 2020

Electronics

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“…Many empirical models have been proposed for the GaN HEMTs, but they are not physics-based in nature [20], [21]. Physics-based models [22]- [24] have the intrinsic advantage of having few parameters. These parameters are directly or indirectly linked to the physical effects governing the device dynamics.…”

mentioning

confidence: 99%

“…Hence, their extraction in a physics-based model is relatively easier than that in the other models. The advanced SPICE model (ASM)-GaN physics-based compact model [22], [23] has recently been selected by the compact-model-coalition standardization process as an industry standard model for the GaN devices. The model showcases as a promising tool for improving the accuracy and versatility of today's power GaN-based circuit simulations.…”

mentioning

confidence: 99%

Extreme Temperature Modeling of AlGaN/GaN HEMTs

Albahrani

Mahajan

Kargarrazi

et al. 2020

IEEE Trans. Electron Devices

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The industry standard advanced SPICE model (ASM)-GaN compact model has been enhanced to model the GaN high electron mobility transistors (HEMTs) at extreme temperature conditions. In particular, the temperature dependence of the trapping behavior has been considered and a simplifying approximation in the temperature modeling of the saturation voltage in the ASM-GaN model has been relaxed. The enhanced model has been validated by comparing the simulation results of the model with the dc I-V measurement results of a GaN HEMT measured with chuck temperatures ranging from 22 • C to 500 • C. A detailed description of the modeling approach is presented. The new formulation of the ASM-GaN compact model can be used to simulate the circuits designed for extreme temperature environments. Index Terms-Compact models, gallium nitride, high electron mobility transistors (HEMTs), high-temperature modeling, physics-based models, semiconductor device measurement, semiconductor device modeling. I. INTRODUCTION G aN-BASED HEMT devices have demonstrated outstanding performance across a wide range of RF and power applications during recent times. The literature [1]-[3] shows increasingly aggressive scaling of GaN devices, which has resulted in very promising high-speed devices with gate lengths as small as 20 nm and f T / f max exceeding 400 GHz [4]. Furthermore, the GaN power devices that can reliably operate with the drain-source voltage (V DS) values of 600-650 V are widely available where they set the current benchmark for commercial GaN power devices.

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“…In [17], [26], an ASM model is developed for GaN HEMT devices. As shown in The ASM model is a physics-based compact model where closed form expressions for drain current and intrinsic charges are derived in terms of surface potential.…”

Section: Physics-based Compact Modeling Methodsmentioning

confidence: 99%

“…Physics-based compact modeling approach [4], [17], [25][26][27][28][29][30][31][32][33], is another type of GaN HEMT modeling technique. In this approach, the model has physics insight, good accuracy, and reasonably fast computational speed.…”

Section: List Of Symbolsmentioning

confidence: 99%

Advanced Space Mapping and Artificial Neural Network-Based Techniques for Microwave Device Modeling

Zhi-hao¹

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ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

Cited by 110 publications

References 22 publications

Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics

Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics

Extreme Temperature Modeling of AlGaN/GaN HEMTs

Advanced Space Mapping and Artificial Neural Network-Based Techniques for Microwave Device Modeling

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