Articulating effect of low copper content on structure and optoelectronic properties of spray deposited Cu2ZnSnS4 thin films – From experiment and first-principles investigations

Chavda, Arvind; Patel, Biren; Marathey, Priyanka; Mukhopadhyay, Indrajit; Ray, Abhijit

doi:10.1016/j.mseb.2020.114912

Cited by 6 publications

(3 citation statements)

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“…The optical band gap values are estimated by plotting a graphical relationship of (αhv) 2 versus photon energy (hʋ) and taking the best straight portion after the fundamental absorption edge to intersect the photon energy at ((αhv) 2 =0) as shown in figure (5). It can be seen that the value of the band gap increases with increasing thiourea concentration from 1.68 eV at 0.14 M to 1.83 eV at 0.20 M and then it decreases to 1.60 eV at 0.24 M as shown in table (4). The increase in the values of band gap can be attributed to the increase in the crystallization of the films and the reduction of crystal defects which lead to a decrease in the shallow local levels inside the forbidden gap which appears as an increase in the energy gap [15].…”

Section: Optical Propertiesmentioning

confidence: 80%

“…By employing UV-Vis spectrophotometry, the optical spectra of all films could be studied in the range of (300-900) nm to obtain precise information on the optical energy gap of films. The absorbance (A) as a function of wavelength is shown in figure (4). A fundamental absorption edge in the UV region of all films acted differently, shifting to a higher wavelength, refers to a narrow band gap caused by the increase in lattice defect and, consequently, the increase in absorbance.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…The pioneering work of Fujishima and Honda opened up a broad research field to find suitable, stable semiconductors and inexpensive water splitting applications [2]. To make efficient use of this abundant solar energy through water splitting, several semiconductors have been taken under the trail to develop a suitable photo absorber material [3,4]. But to see at least one-third of the projected energy requests of human society, we need materials with a minimum solar energy conversion efficiency of 10%.…”

Section: Introductionmentioning

confidence: 99%

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Physical properties of Cu2MgSnS4 thin films prepared by chemical spray pyrolysis technique: The effect of thiourea concentration

Abdullah¹,

Bakr²,

Diwate³

2022

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In this work, chemical spray pyrolysis is employed to prepare Cu2MgSnS4 thin films using different concentrations of thiourea (0.14, 0.16, 0.18, 0.20, 0.22, 0.24) M at a substrate temperature of 400 ℃ and thickness of (300±10) nm. The XRD results displayed that all thin films are polycrystalline with tetragonal structure and favorite orientation along the (112) plane. The crystallite size of films is estimated by Scherrer's equation and it was found that it increases with increasing thiourea concentration up to 0.20 M and then it decreases with further increase in thiourea concentration. The FESEM result exhibited the appearance of nanostructures with different particle sizes and shapes. The band gap was estimated using Tauc's relationship and it was found that the value of the band gap increases with increasing thiourea concentration from 1.68 eV at 0.14 M to 1.83 eV at 0.20 M and then it decreases to 1.60 eV at 0.24 M. Raman spectroscopy investigation confirms the purity of the sample formation phase. The main peak for all films is located at about 330 cm-1 . The broadening of this peak in solid solutions can be attributed to the disturbance effects related to the locations of the metal and sulfur atoms in the tetrahedral lattice due to chemical substitutions in the crystalline positions. Hall effect results showed that all films are P-type. The increase in carrier concentration and its motility with increasing thiourea concentrations leads to a decrease in the resistance of the films.

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Section: Optical Propertiesmentioning

confidence: 80%

Section: Optical Propertiesmentioning

confidence: 99%