Arsenic δ-doped HgTe∕HgCdTe superlattices grown by molecular beam epitaxy

Tsen, G.K.O.; Musca, Charles; Dell, John; Antoszewski, J.; Faraone, Lorenzo; Becker, C. R.

doi:10.1063/1.2888967

Cited by 9 publications

(4 citation statements)

References 6 publications

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“…Similar results indicating the dominance by lattice scattering have been observed in HgTe/HgCdTe multilayers as well. 32 The good match between experimental data from two different samples and their agreement with the calculated mobilities without using any adjustable parameters demonstrates the dominant behavior of phonons in this temperature range. Thus the mobilities for the bulk samples are also similar to those obtained in the epilayer.…”

Section: Resultsmentioning

confidence: 53%

Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature

Murthy

Venkataraman

Sharma

et al. 2009

Journal of Applied Physics

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Magnetotransport measurements in pulsed fields up to 15 T have been performed on mercury cadmium telluride (Hg1−xCdxTe, x∼0.2) bulk as well as liquid phase epitaxially grown samples to obtain the resistivity and conductivity tensors in the temperature range 220–300 K. Mobilities and densities of various carriers participating in conduction have been extracted using both conventional multicarrier fitting (MCF) and mobility spectrum analysis. The fits to experimental data, particularly at the highest magnetic fields, were substantially improved when MCF is applied to minimize errors simultaneously on both resistivity and conductivity tensors. The semiclassical Boltzmann transport equation has been solved without using adjustable parameters by incorporating the following scattering mechanisms to fit the mobility: ionized impurity, polar and nonpolar optical phonons, acoustic deformation potential, and alloy disorder. Compared to previous estimates based on the relaxation time approximation with outscattering only, polar optical scattering and ionized impurity scattering limited mobilities are shown to be larger due to the correct incorporation of the inscattering term taking into account the overlap integrals in the valence band.

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Section: Resultsmentioning

confidence: 53%

Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature

Murthy

Venkataraman

Sharma

et al. 2009

Journal of Applied Physics

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“…The detailed description of the sample growth as well as the determination of the HgTe-well and HgCdTebarrier thicknesses can be found elsewhere. 29 For the PL measurements, the step-scan FTIR spectrometer-based modulated PL technique was employed. 22,28 A combination of KBr beamsplitter and liquid-nitrogen cooled PC HgCdTe detector was selected for the FTIR spectrometer (Bruker IFS 66v/S), 24 and the spectral resolution was set to be better than 1.0 meV so as to discriminate weak and energetically close-positioned PL features.…”

Section: Methodsmentioning

confidence: 99%

Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice

Shao

Lü

Tsen

et al. 2012

Journal of Applied Physics

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Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities Appl. Phys. Lett. 101, 132105 (2012) Effects of Co content on the structural, luminescence, and ferromagnetic properties of Zn1−xCoxSy films J. Appl. Phys. 112, 063712 (2012) Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire J. Appl. Phys. 112, 063112 (2012) Observation of In-related collective spontaneous emission (superfluorescence) in Cd0.8Zn0.2Te:In crystal Appl. Phys. Lett. 101, 091115 (2012) Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: Experiment and theory Temperature (11-250 K) and excitation power (5-480 mW) dependent infrared photoluminescence (PL) measurements are conducted on a HgTe=Hg 0:05 Cd 0:95 Te superlattice (SL) sample in a spectral range of 5-18 lm with adequate spectral resolution and signal-to-noise ratio. Three PL components are identified from the evolution of the PL lineshape with temperature although the full-width at half-maximum (FWHM) of the whole PL signal is only about 7 meV at 11 K, for which different changes of the energy, FWHM, and integral intensity are evidenced. The mechanisms are clarified that the medium-energy component is due to electron-heavy hole intersubband transition, while the low-energy (LE) component correlates to localized states and the high-energy (HE) one may originate in interfacial inhomogeneous chemical intermixing and Brillouin-zone boundary effects. The LE and HE component-related effects are responsible for the PL quality of the SL at the temperatures well below and above 77 K, respectively. V C 2012 American Institute of Physics. [http://dx.

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“…The N doping is performed simultaneously with the incorporation of Te, which is expected to enhance the N incorporation rate. Later, ␦-doping was used for fabricating p-type GaN and HgTe thin films and obtained a good result [17,18]. Moreover, it has been reported that ␦-doping can reduce the density of threading dislocations in the highly faulted nitride layers and, therefore, to improve the crystalline structure of the host semiconductor [19].…”

Section: Introductionmentioning

confidence: 99%

p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy

Liu

et al. 2010

Journal of Alloys and Compounds

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Arsenic δ-doped HgTe∕HgCdTe superlattices grown by molecular beam epitaxy

Cited by 9 publications

References 6 publications

Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature

Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature

Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice

p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy

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