Array Architectures for 3-D NAND Flash Memories

Micheloni, Rino; Aritome, S.; Crippa, Luca

doi:10.1109/jproc.2017.2697000

Cited by 83 publications

(39 citation statements)

References 38 publications

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“…Memory can be divided into volatile memory and nonvolatile memory, where NAND flash is the most widely used nonvolatile storage device due to its rewritable properties and low cost . However, some problems exist in NAND flash that need to be solved, such as low writing and reading speed, high operating voltage, and relatively large cell dimensions.…”

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confidence: 99%

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Ting

Chen

et al. 2019

Advanced Science

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The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is demonstrated to efficiently increase the device density. Though electrochemical migration (ECM) resistive random access (RRAM) has the advantage of low power consumption, the stability of the operating voltage requires further improvements due to filament expansions and deterioration. In this work, 3D‐VRRAM arrays are designed. Two‐layered RRAM cells, with one inert and one active sidewall electrode stacked at a cross‐point, are constructed, where the thin film sidewall electrode in the VRRAM structure is beneficial for confining the expansions of the conducting filaments. Thus, the top cell (Pt/ZnO/Pt) and the bottom cell (Ag/ZnO/Pt) in the VRRAM structure, which are switched by different mechanisms, can be analyzed at the same time. The oxygen vacancy filaments in the Pt/ZnO/Pt cell and Ag filaments in the Ag/ZnO/Pt cell are verified. The 40 nm thickness sidewall electrode restricts the filament size to nanoscale, which demonstrates the stability of the operating voltages. Additionally, the 0.3 V operating voltage of Ag/ZnO/Pt ECM VRRAM demonstrates the potential of low power consumption of VRRAM arrays in future applications.

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confidence: 99%

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Ting

Chen

et al. 2019

Advanced Science

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“…Indeed, 3D NAND Flash technology suffers from multiple sources of retention loss caused by temperature-activated charge loss mechanisms [23][24][25]. Either it is vertical or lateral charge loss through the structure of the memory architecture [12], the outcome is always the same: Temperature corrupts the content of the memory cells to a point where stored data are unrecoverable. Several works in literature discuss how to optimize the NAND Flash characteristics in the drive in order to improve the overall reliability of the system [26,27].…”

Section: Related Workmentioning

confidence: 99%

“…Such heavy temperature sensitivity has been modeled and characterized throughout the years, so that dedicated algorithms can be applied on a firmware level to recover corrupted data with the help of powerful Error Correction Codes (ECCs) and eventually enhance a drive's reliability by retarding uncorrectable failure events [8,9,11]. Nevertheless the continuous race for higher storage density that involves the IIoT world as well has further exacerbated temperature-related issues caused either by the adoption of multi-bits per cell paradigm or by the transition from planar (2D) NAND Flash to vertically integrated 3D NAND Flash technology [12]. This has exposed how acting only at a physical or algorithmic abstraction level could be insufficient, thus calling for an exploration of solutions that span from the SSD micro-architectural parameters to the characterization of 3D NAND Flash technology peculiarities [13].…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we address this challenge by exploring a proper thermal-aware methodology that mitigates the impact of the self-heating effect in SSDs for IIoT edge gateway architectures. Such a method considers the power and performance figures of a Triple Level Cell 3D NAND Flash technology [12] integrated in the drive and exploits the synergy with the operating system of the host to dynamically vary the parameters of a SSD's queuing system in order to minimize performance drop-outs caused by throttling events.…”

Section: Introductionmentioning

confidence: 99%

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Mitigating Self-Heating in Solid State Drives for Industrial Internet-of-Things Edge Gateways

Zambelli

Zuolo²,

Crippa³

et al. 2020

Electronics

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Data storage in the Industrial Internet-of-Things scenario presents critical aspects related to the necessity of bringing storage devices closer to the point where data are captured. Concerns on storage temperature are to be considered especially when Solid State Drives (SSD)based on 3D NAND Flash technology are part of edge gateway architectures. Indeed, self-heating effects caused by oppressive storage demands combined with harsh environmental conditions call for proper handling at multiple abstraction levels to minimize severe performance slow downs and reliability threats. In this work, with the help of a SSD co-simulation environment that is stimulated within a realistic Industrial Internet-of-Things (IIoT) workload, we explore a methodology orthogonal to performance throttling that can be applied in synergy with the operating system of the host. Results evidenced that by leveraging on the SSD micro-architectural parameters of the queuing system it is possible to reduce the Input/Output operations Per Second (IOPS) penalty due to temperature protection mechanisms with minimum effort by the system. The methodology presented in this work opens further optimization tasks and algorithmic refinements for SSD and system designers not only in the IIoT market segment, but generally in all areas where storage power consumption is a concern.

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“…As 3D NAND technology matures gradually, many manufacturers have started to develop SSDs based on 3D NAND Flash [24][25][26][27]. Some studies have discussed the architecture and working principles of 3D NAND Flash cells [28][29][30][31][32][33][34].…”

Section: Related Workmentioning

confidence: 99%

Measurement and Analysis of SSD Reliability Data Based on Accelerated Endurance Test

et al. 2019

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In recent years, NAND Flash-based solid-state drives (SSDs) have become more widely used in data centers and consumer markets. Data centers generally choose to provide high-quality storage services by deploying a large number of SSDs, but there are no effective preventive measures to reduce the impact of SSD failures currently. Some existing studies have analyzed the relevant factors related to SSD failures from different angles, but the characteristics of reliability changes exhibited by SSD throughout the life cycle have not been explored in depth. On the other hand, although the 3D manufacturing process has increased the storage density of the SSD, the mutual influence between the flash units has also increased, resulting in severe degradation of the performance and lifetime of the SSD. Therefore, in order to fully understand the reliability varying process of SSD throughout the life cycle, we first designed an SSD lifetime endurance test method, then conducted the endurance test and collected the reliability data for the entire life cycle of the 3D TLC SSD in the laboratory environment with reference to the JEDEC standard. Through the analysis of experimental data and its statistical correlation, it is found that SSD will produce a large number of uncorrectable errors before reaching the endurance limit, and there will be a phenomenon of continuous high operating temperature, as well as showing some intrinsic relationships about SSD reliability data. The findings in this paper are valuable for identifying whether an SSD is going to fail.

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Array Architectures for 3-D NAND Flash Memories

Cited by 83 publications

References 38 publications

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Mitigating Self-Heating in Solid State Drives for Industrial Internet-of-Things Edge Gateways

Measurement and Analysis of SSD Reliability Data Based on Accelerated Endurance Test

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