Armchair Graphene Nanoribbon Resonant Tunneling Diodes Using Antidote and BN Doping

Goharrizi, Arash Yazdanpanah; Zoghi, Milad; Saremi, Mehdi

doi:10.1109/ted.2016.2586459

Cited by 84 publications

(38 citation statements)

References 35 publications

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“…9 The CNTFET device has attracted many interests because it provides a better gate control on the channel region thus increasing the electrical performance when compared to silicon based devices. [10][11][12][13][14] The undesirable short channel effects (SCEs) elimination and reduced subthreshold swing as the important parameters have been improved in the new configurations involving the gate engineering and also channel region doping engineering. 15,16 Also, the other type of the researches are related to extraction of an analytical model for the drain current.…”

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confidence: 99%

Modeling a Double-Halo-Doping Carbon Nanotube FET in DC and AC Operations

Anvarifard

2018

ECS J. Solid State Sci. Technol.

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Double-Halo-Doping carbon nanotube field effect transistor (DH-CNTFET) has been recently suggested as a reliable and efficient device for the nanoscale applications which is a potential candidate to obsolete the conventional CNTFET (C-CNTFET), eventually. In this respect, the work aims to present an accurate compact analytical model for the drain current which is applicable in the different SPICE levels for circuit simulations. The paper captures the fundamental physic of a conventional CNTFET in order to develop a comprehensive and accurate analytical drain current model for the DH-CNTFET structure. Regarding the DH-CNTFET structure, important decision variables in the cases of ballistic carrier velocity, electron mobility, source/drain series resistance, threshold voltage, drain induced barrier lowering (DIBL) factor, fermi level to the band edge in the source region, subthreshold swing factor and band-to-band tunneling factor are introduced and globally searched by the PSO algorithm to achieve the most accurate relation for the drain current. The suggested compact analytical model is successfully compared with the realistic data extracted from the numerical simulation of the DH-CNTFET by full quantum mechanical Green , s function approach. The results revealed that the compact analytical model predicts the drain current of the DH-CNTFET, accurately. As the other worthwhile effort, the work has proposed a compact analytical model for the gate-source and gate-drain capacitances providing it very attractive and suitable for the simulations under the circuit in the SPICE different levels.

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confidence: 99%

Modeling a Double-Halo-Doping Carbon Nanotube FET in DC and AC Operations

Anvarifard

2018

ECS J. Solid State Sci. Technol.

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“…20. It is worth noting that although several TCAD based models are proposed in the literature for either CNFETs or graphenenanoribbon FETs (GNRFETs), [21][22][23][24][25][26][27][28][29] most of them are not in the form of a compact model and thus, are not consistent for use in circuit simulators. However, the model presented in Ref.…”

Section: Resultsmentioning

confidence: 99%

A Half Adder Design Based on Ternary Multiplexers in Carbon Nano-Tube Field Effect Transistor (CNFET) Technology

Nikbakht

Dideban

Moezi

2020

ECS J. Solid State Sci. Technol.

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In this paper a ternary half adder is proposed and designed using carbon nano-tube field effect (CNFET) transistors. This novel design in ternary logic is based on multiplexers and level converters. The performance of the proposed design is examined against different supply voltages and a range of temperatures and fan-outs. Propagation delay time, power consumption, power-delay product (PDP) and transistor count are compared between the proposed ternary half adder and prior works. It is shown that the delay time in the proposed design can be improved by 75% with respect to other works while the PDP can be improved at least by 5%. Moreover, the transistor count in the novel design is less than other works at least by 10%. Therefore, it can be a promising candidate for the design of next generation of adder circuits in digital logic systems and ALU blocks.

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“…Tan et al [1] provided a detailed review of recent advances in ultrathin 2D materials along with their synthetic methods, characterisation techniques, and applications. The 2D materials that have been explored in various applications include group III monolayer of borophene [2], group IV monolayer of graphene [3–6] and graphene‐like 2D materials [7], silicene [8] and stanene [9, 10], group V monolayer of phosphorene [11], transition metal dichalcogenides [12], and metal chalcogenides such as GaTe [13] and InSe [14]. Very recently, a group VI material called tellurene (single layer of tellurium) has been added to the list.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic transport in tellurene FETs

Alam

2020

Micro & Nano Letters

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Armchair Graphene Nanoribbon Resonant Tunneling Diodes Using Antidote and BN Doping

Cited by 84 publications

References 35 publications

Modeling a Double-Halo-Doping Carbon Nanotube FET in DC and AC Operations

Modeling a Double-Halo-Doping Carbon Nanotube FET in DC and AC Operations

A Half Adder Design Based on Ternary Multiplexers in Carbon Nano-Tube Field Effect Transistor (CNFET) Technology

Anisotropic transport in tellurene FETs

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