Argon plasma treatment effects on SiSiO2 structures

Kassabov, J.; Atanassova, E.; Dimitrov, Dimiter M.; Goranova, E.

doi:10.1016/0038-1101(88)90122-0

Cited by 18 publications

(3 citation statements)

References 34 publications

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“…It is suggested that a forerunner and possible cause of ultimate dielectric breakdown is the charge trapping and buildup on defect sites in the silicon dioxide layer. − The buildup results in a tunneling current, the stress-induced leakage current, flowing through the oxide which becomes greater during device operation. These defect sites are either present in the as-fabricated oxide , or induced when carriers are injected from the contacts into the layer. ,− Degradation of silicon dioxide films may thus primarily occur near the interfaces with contacting metals or semiconductors …”

Section: Introductionmentioning

confidence: 99%

The Chemical Origin of Defects on Silicon Dioxide Exposed to Ethanol

and

Shu

2003

J. Phys. Chem. B

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The adsorption and reaction of ethanol on the metal-free, pure silicon dioxide surface have been studied as a model system to explore the chemical origin of the defects which are detrimental in the gate oxide exposed to chemical vapors. In addition to molecular adsorption, ethanol decomposed to the extent that a variety of species including ethyl, ethoxy, and hydroxyl were produced even at the surface temperature of 115 K. The silicon dioxide surface was selective for the formation of acetaldehyde through cleavage of the C-H bond. The bare surface, however, was more selective for ethanol conversion to ethylene than the surface covered by fragments and products. Comparison of static secondary ion mass spectra taken from the surface exposed to deuterated and nondeuterated ethanol, respectively, showed that the C-H, Et-OH, and EtO-H bonds were disrupted during the surface decomposition of ethanol. Hydroxyl hydrogen of ethanol readily exchanged with silanol hydrogen of the surface. The formation of Si-H and SiO-H bonds suggests that hydrogen concentration will increase on the metal-free silicon dioxide surface exposed to organic vapors. Its implication to the generations of defects in the silicon dioxide framework and of the stress-induced leakage current will be discussed.

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Section: Introductionmentioning

confidence: 99%

The Chemical Origin of Defects on Silicon Dioxide Exposed to Ethanol

and

Shu

2003

J. Phys. Chem. B

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“…For the FGA SiO 2 sample, the contribution of the Si(–O) 2 is 93.03 %, Si(–O) 4 contributes 5.40 %, and Si(–OH) x contributes 1.58 % to the total O 1s spectrum. These values are almost same of the Ar plasma sample, which means Ar plasma is not disturbing silicon–oxygen bond configuration and the instability in I–V characteristics is only because of argon embedded inside the SiO 2 /Si substrate, which results in increase of positive charges and deep acceptor type interface state generation, and Ar plasma creates defects that act as scattering centers 13 …”

Section: Resultsmentioning

confidence: 84%

“…For Ar plasma treated sample, a clear Ar 2p peak can be seen, whereas this signature was absent for FGA and O 2 plasma treated samples, as shown in Figure 6B,C, respectively. This shows argon embedded inside the SiO 2 /Si substrate, which may result in increase of positive charges and deep acceptor type interface state generation 13 …”

Section: Resultsmentioning

confidence: 98%

Effect of different types of substrate surface treatments on the graphene device performance

Singla

Pathan

2021

Surface & Interface Analysis

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Graphene–substrate interface is very crucial for analyzing graphene device performance. In this article, we have shown how the graphene device performance got affected because of different types of substrate surface treatment techniques used before graphene transfer. For fabrication of graphene devices, monolayer chemical vapor deposition (CVD) graphene was transferred onto SiO2 grown thermally on Si substrate. Forming gas annealed SiO2/Si shows better device performance as compared with as‐grown SiO2 on Si substrate. A further effect of oxygen plasma and argon plasma cleaning of SiO2 surface before graphene transfer was investigated. Forming gas annealing improves the performance and plasma treatment degrade the graphene devices' performance.

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