ArF Excimer Laser Doping into Amorphous Silicon thin films

Abstract

Doping of amorphous silicon (a-Si or a-Si:H) coated by a spin-on oxide film containing the dopant (phosphorus or boron) using an ArF excimer laser has been investigated as a function of laser fluence, number of pulses and dopant film thickness. From these results, it is found that the surface concentration and the junction depth vary with the number of pulses, and that the doping process is rate limiting. Sheet resistance lower than 10 kΩ/□ have been obtained. It is also shown that for a-Si:H films, laser irradiation produces exodiffusion of hydrogen from the molten layer resulting in rough surface. This one-step process seems suitable for polycrystalline silicon thin film transistors (TFT's) fabrication.

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“…Next, the proposed approaching humans is described in Section IV and the experiments and their evaluation are introduced in Section V. Lastly, the paper is briefly concluded in Section VI with a short outlook. 1 The authors are researchers with the Robot and Assistive Systems Department, Fraunhofer IPA, 70569 Stuttgart, Germany. <first name>.<last name>@ipa.fraunhofer.de 2…”

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