Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources

Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy

“…The ratio of growth rates on different GaAs facets was shown to be sensitive to the As pressure [16] and to the type of As species [17]. On (0 0 1) surfaces, it was found that the Ga diffusion length is lower under As 2 than under As 4 [18].…”