“…The ratio of growth rates on different GaAs facets was shown to be sensitive to the As pressure [16] and to the type of As species [17]. On (0 0 1) surfaces, it was found that the Ga diffusion length is lower under As 2 than under As 4 [18].…”
“…The ratio of growth rates on different GaAs facets was shown to be sensitive to the As pressure [16] and to the type of As species [17]. On (0 0 1) surfaces, it was found that the Ga diffusion length is lower under As 2 than under As 4 [18].…”
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