Area-changed capacitive accelerometer using 3-mask fabrication process

Majlis, Burhanuddin Yeop; Bais, Badariah; Tamsir, Agus Santoso

doi:10.1117/12.523631

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…The typical diffusion time is 15-20 hours for a diffusion depth of 15-20 µm. In order to supply a thick device silicon layer (>30 µm) on the glass, the conventional SOG process is widely used [9][10][11]. In the conventional SOG process, some shallow trenches are etched in a glass wafer or the backside of a silicon wafer first.…”

Section: Introductionmentioning

confidence: 99%

A single-mask substrate transfer technique for the fabrication of high-aspect-ratio micromachined structures

Tang

Liu

Agarwal

et al. 2007

J. Micromech. Microeng.

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In this paper, a single-mask substrate transfer process for the fabrication of high-aspect-ratio (HAR) suspended structures is presented. The HAR silicon structures are fabricated using a deep reactive ion etching (DRIE) technique and then transferred to a glass wafer using silicon/thin film/glass anodic bonding and silicon thinning techniques. The HAR structures are released using self-aligned wet etching of the glass. Two key processes are discussed. One is the silicon/thin film/glass anodic bonding, with special emphasis on the effect of the bonding material on the bonding shear strength. The other is the silicon backside thinning via aqueous solution of potassium hydroxide (KOH). A lateral RF MEMS switch has been fabricated and demonstrates low loss up to 25 GHz. This substrate transfer process has the advantages of high-aspect ratio, low loss and high flexibility.

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Section: Introductionmentioning

confidence: 99%

A single-mask substrate transfer technique for the fabrication of high-aspect-ratio micromachined structures

Tang

Liu

Agarwal

et al. 2007

J. Micromech. Microeng.

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show abstract

Introduction

Liu¹

2010

RF MEMS Switches and Integrated Switching Circuits

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Mechanical Sensitivity Enhancement of an Area-Changed Capacitive Accelerometer by Optimization of the Device Geometry

Bais

Majlis

2005

Analog Integr Circ Sig Process

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A study of the enhancement of the mechanical sensitivity of an area-changed capacitive accelerometer by optimization of the device geometry is presented. The movable mass of the accelerometer was designed with many fingers connected in parallel and suspended over the stationary electrodes composed of differential comb fingers by means of mechanical beams anchored onto the substrate. The maximum displacement possible based on the chosen design structure was determined. From this displacement value the spring constant was calculated, and based on this spring constant value various combinations of the beam length and width were selected. The lengths and the widths were then varied and simulated using the Coventorware 2001.3 software. This was done as theoretical analysis showed that the mechanical beam dimensions are significantly more dominant in the overall device sensitivity. The displacement and spring constant variations with the beam dimensions at an applied acceleration was observed and analyzed. The same process was done for the number of fingers, length and thickness of each finger. Each of these was done in isolation based on the optimum geometry of the mechanical beams and tested to ensure that alterations of these aspects do not have a significant effect on the overall sensitivity. The modal and harmonic analysis were also simulated and observed to ensure the linearity and the stability of the dominant mode of the operation of the device. Optimum results of the device geometry are presented and discussed, along with suggested next steps.

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Area-changed capacitive accelerometer using 3-mask fabrication process

Cited by 3 publications

References 6 publications

A single-mask substrate transfer technique for the fabrication of high-aspect-ratio micromachined structures

A single-mask substrate transfer technique for the fabrication of high-aspect-ratio micromachined structures

Introduction

Mechanical Sensitivity Enhancement of an Area-Changed Capacitive Accelerometer by Optimization of the Device Geometry

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