Are values of parameters describing magnetic properties of crystal really fixed?

Szuszkiewicz, W.; Dynowska, E.

doi:10.1016/j.jallcom.2005.02.048

Cited by 8 publications

(4 citation statements)

References 69 publications

(80 reference statements)

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“…We have selected those obtained by experimental methods claimed to be the most accurate ones for this kind of problem. 42,43 We kept magnetization steps measurements on highly diluted systems and inelastic neutron scattering measurements either on highly diluted systems or on pure systems. Indeed with these methods the exchange integrals are obtained via solutions of a low-temperature Hamiltonian, without any assumption on sum rules linked to mean field models.…”

Section: A Superexchange Interactions With Simple Mn-mn Bridgementioning

confidence: 99%

Spin-wave measurements on hexagonalMnTeofNiAs-type structure by inelastic neutron scattering

et al. 2006

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MnTe with a hexagonal structure of NiAs type is an antiferromagnetic semiconductor below the Néel temperature T N = 310 K. The spin-wave excitations of a MnTe single crystal have been measured at T =11 K by inelastic neutron scattering. The experimental spin-wave dispersions, obtained along five high-symmetry directions of the reciprocal space, have been modeled with a Heisenberg Hamiltonian including isotropic exchanges up to the third nearest neighbors and a planar magnetic anisotropy. This yielded the exchange integral values J 1 = −21.5 K, J 2 = 0.67 K, and J 3 = −2.87 K. These results are presented and compared to experimental values of relevant diluted magnetic semiconductors, allowing a discussion on a generic description of the distance dependence of the nearest-neighbor magnetic interactions.

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Section: A Superexchange Interactions With Simple Mn-mn Bridgementioning

confidence: 99%

Spin-wave measurements on hexagonalMnTeofNiAs-type structure by inelastic neutron scattering

et al. 2006

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“…It was reported that the lattice constants of semiconductor lattice doped with charged energetic atoms are altered by the effect of two features: the free carrier effect and the atomic size effect. Typically, the atomic size effect is more effective than free carrier effect . As a consequence, the relative decrease in cell volume and lattice constants with Mn dopant concentrations is ascribed to the replacement Hg 2+ of larger ionic radius (1.5 Å) by Mn 2+ of smaller ionic radius (1.4 Å).…”

Section: Resultsmentioning

confidence: 99%

Influences of Mn doping on the microstructural, semiconducting, and optoelectronic properties of HgO nanostructure films

et al. 2019

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Mn-doped HgO nanostructured thin films (Hg 1-x Mn x O) have been prepared using electron beam evaporation technique on Corning glass (1022) substrate at room temperature with different concentrations x = 0, 0.015, 0.05, 0.1, 0.15, and 0.2.The microstructural, morphological, semiconducting, and optoelectronic properties of the films have been investigated. The X-ray diffraction spectra suggest a hexagonal wurtzite type structure with lattice parameters decreased with increasing Mn content. It was found that the average particle size of the films decreases with increasing Mn doping which is confirmed by FE-SEM and AFM micrographs. The optical band gap of the investigated Mn-doped HgO nanocrystalline films is determined from the absorption coefficient and found to increase with the increase of Mn concentration which is attributed to the sp-d exchange interaction and/or the quantum confinement effect. The refractive index and extinction coefficient of the Mn-doped HgO films are also reported. The refractive index dispersion n(λ) is analyzed by single-effective-oscillator dispersion model proposed by the Wemple-DiDomenico (WDD). The oscillator parameters were estimated. The obtained dispersion values are suitable for the design of optoelectronic devices. K E Y W O R D S diluted magnetic semiconductors, microstructure properties, nanomaterial, optical properties, single oscillator parameters

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“…Deviations from Vegard's law are derived from many factors, as electronic and/or magnetic effects, as already observed for metallic alloys [13,14,15]. The exchange integrals in the Heisenberg model, describing the super exchange interactions between magnetic ions in DMS are strongly dependent on the lattice parameter [16]. An important property for a material to be useful for spintronics is its possible ferromagnetism.…”

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confidence: 81%

Anomalous lattice parameter of magnetic semiconductor alloys

Caetano

Marques

Ferreira

et al. 2009

Applied Physics Letters

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Are values of parameters describing magnetic properties of crystal really fixed?

Cited by 8 publications

References 69 publications

Spin-wave measurements on hexagonalMnTeofNiAs-type structure by inelastic neutron scattering

Spin-wave measurements on hexagonalMnTeofNiAs-type structure by inelastic neutron scattering

Influences of Mn doping on the microstructural, semiconducting, and optoelectronic properties of HgO nanostructure films

Anomalous lattice parameter of magnetic semiconductor alloys

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