2007
DOI: 10.1109/mc.2007.7
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Architectures for silicon nanoelectronics and beyond

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Cited by 77 publications
(37 citation statements)
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“…Conditions using BCH (15,7,2), which adds 8 parity bits in order to detect and correct 2 errors in the codeword.…”
Section: B Bose-chaudhuri-hocquenghem (Bch)mentioning
confidence: 99%
See 1 more Smart Citation
“…Conditions using BCH (15,7,2), which adds 8 parity bits in order to detect and correct 2 errors in the codeword.…”
Section: B Bose-chaudhuri-hocquenghem (Bch)mentioning
confidence: 99%
“…The realisation of fault tolerance in nano/CMOS nanoelectronic architecture will incur area, energy and operational latency overhead in CMOS domain [15]. Such overhead must be taken into account when investigating and evaluating hybrid CMOS/nanodevice fault tolerant architectures.…”
Section: B Hamming With Bad Line Exclusion : Techniquementioning
confidence: 99%
“…In order to discover free rooms for further performance and functionality improvements, a number of emerging nano-devices, e.g., Doped/Schottky Barrier Silicon NanoWire FETs (SiNWFETs), various types of Fin-Shaped FETs, and Carbon Nanotube FETs (CNTFETs) have been proposed by research community [2]- [5]. Due to their novel and complex geometries, they introduce new challenges such as additional sources of variation which makes the statistical variation analysis challenging [7].…”
Section: Introductionmentioning
confidence: 99%
“…These circuits will not only more susceptible to errors, but will also have high defect rates. Systems employing nano components will presumably have to deal with non-negligible error rates [1], [2], and [7]. The error effects can be corrected using techniques such as hardware/time redundancy [16], error-correcting information encoding [8] and [19], software-based fault tolerance [20], or combinations thereof [15] and [18].…”
Section: Introductionmentioning
confidence: 99%