Architecture Choice for Radiation-Hard AlGaN/GaN HEMT Power Devices

Wellekens, D.; Stoffels, Steve; Luu, A.; Magali, Haussy; Melotte, M.; Agten, D.; Decoutere, Stefaan

doi:10.1109/radecs.2017.8696192

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…Zerarka et al have explored and explained SEEs in COTS with the aid of both experimental setups and TCAD simulations [7,8]. Accordingly, several studies such as the robustness concerning the architecture choice for radiation hardened device [9,10], the effect of cumulative ionizing radiations [11][12][13][14][15][16][17][18] including radiation sensitive devices such as MOSHEMTs [19] and their modifications with MgCaO gate dielectric to improve radiation tolerance [20], displacement defects due to heavy ion particle strikes [21], the impact of the angled strike [22], and studies related to transistor failures at OFF-state [23] have been carried out in an attempt to emulate the harsh radiation environments subjected to the device so that its deleterious effects can be studied and understood, which will pave the way for new device architectures that would demonstrate radiation hardened operation.…”

Section: Introductionmentioning

confidence: 99%

Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Sehra

Kumari

Gupta

et al. 2021

Semicond. Sci. Technol.

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This paper presents an extensive Victory TCAD based assessment to evaluate the device performance under heavy ion particle strike induced single event effects (SEEs). The impact of SEEs on π-shaped AlGaN/GaN HEMT architecture has been compared with conventional AlGaN/GaN HEMT. For validation of simulation, models have been calibrated against the experimental data of in-house fabricated GaN HEMTs on SiC wafers, after which π-shaped architecture is realized using Silvaco's Victory Process simulation tools. Comparisons demonstrate that π-Gate HEMT architecture is a SEE hardened device under different heavy ion particle strike conditions. Further, due to the step modification in the electric field itself, the π-Gate HEMT also exhibits SEE hardened operation under different ambient temperatures. The effect of angled heavy ion particle strike has also been studied for evaluating the device performance with regards to SEE.

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