Heavy-Ion Testing Method and Results of Normally OFF GaN-Based High-Electron-Mobility Transistor

Sauveplane, Jean-Baptiste; Dufour, Arnaud; Marcault, Emmanuel; Orsatelli, Marc; Duran, Gilbert; Burky, J.; Forgerit, B.; Tilhac, F.; Guerre, F. X.

doi:10.1109/tns.2021.3109990

Cited by 11 publications

(1 citation statement)

References 13 publications

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“…However, there is still much to understand in terms of the response of these materials to various radiation environments, including total ionizing dose conditions where ionization energy deposition dominates and single event upsets during heavy ion strikes (6)(7)(8)(9)(10) . For example, SiC power MOSFETs exhibit latent heavy ion damage to the gate oxide at drain to source bias voltages much lower than the rated breakdown voltages (6)(7)(8) .…”

Section: Introductionmentioning

confidence: 99%

Reversible Total Ionizing Dose Effects in NiO/Ga₂O₃ Heterojunction Rectifiers

Li¹,

Chiang²,

Xia³

et al. 2023

ECS Trans.

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NiO/Ga2O3 heterojunction rectifiers were exposed to 1Mrad fluences of Co-60 g-rays either with or without reverse biases. While there is small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma-photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000x reduction in forward current and 100x increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on-off ratio is also reduced by almost 5 orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of < 4 cm-1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current-voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes.

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Section: Introductionmentioning

confidence: 99%

Reversible Total Ionizing Dose Effects in NiO/Ga₂O₃ Heterojunction Rectifiers

Li¹,

Chiang²,

Xia³

et al. 2023

ECS Trans.

View full text Add to dashboard Cite

show abstract

Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices

Wu,

Xu,

et al. 2023

Microelectronics Reliability

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Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers

Chiang

Xia

et al. 2023

Journal of Applied Physics

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NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000× reduction in forward current and a 100× increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on–off ratio is also reduced by almost five orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of <4 cm−1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current–voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate that these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes.

show abstract

Heavy-Ion Testing Method and Results of Normally OFF GaN-Based High-Electron-Mobility Transistor

Cited by 11 publications

References 13 publications

Reversible Total Ionizing Dose Effects in NiO/Ga₂O₃ Heterojunction Rectifiers

Reversible Total Ionizing Dose Effects in NiO/Ga₂O₃ Heterojunction Rectifiers

Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices

Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers

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Heavy-Ion Testing Method and Results of Normally OFF GaN-Based High-Electron-Mobility Transistor

Cited by 11 publications

References 13 publications

Reversible Total Ionizing Dose Effects in NiO/Ga2O3 Heterojunction Rectifiers

Reversible Total Ionizing Dose Effects in NiO/Ga2O3 Heterojunction Rectifiers

Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices

Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers

Contact Info

Product

Resources

About

Reversible Total Ionizing Dose Effects in NiO/Ga₂O₃ Heterojunction Rectifiers

Reversible Total Ionizing Dose Effects in NiO/Ga₂O₃ Heterojunction Rectifiers