Approaching Solar‐Grade a‐Si:H for Photovoltaic Applications via Atmospheric Pressure CVD Using a Trisilane‐Derived Liquid Precursor

Abstract

The article demonstrates the fabrication of a-Si:H thin films in a N 2 -filled glove box via atmospheric pressure chemical vapor deposition (APCVD) using a vaporized silicon hydride polymer/silicon nanoparticle composite ink prepared from trisilane (Si 3 H 8 ). It is shown via Raman spectroscopy that the films exhibit good short and mid-range atomic order. Fourier transform infrared spectroscopy reveals a fairly compact microstructure and a hydrogen concentration of 13-18 at.%. Photothermal deflection spectroscopy demonstrates a sub band gap absorption only a factor of $6 higher than that of solar-grade plasma-enhanced CVD (PECVD) material. As a demonstration of the utility of our ink, c-Si wafer surface passivation layers are deposited resulting in effective minority charge carrier lifetimes exceeding 400 ms. These lifetimes constitute the as of yet highest reported values achieved using liquid precursors for bifacial coating without subsequent hydrogen radical treatment. The high electronic quality of the layers is shown via the fabrication of a n-i-p thin-film solar cell with an APCVD intrinsic absorber layer exhibiting an efficiency of 3.4% and hence, placing its photovoltaic performance among the highest reported for cells processed from the liquid phase and without a back reflector.

Inverted MAPbI3 Perovskite Solar Cells with Graphdiyne Derivative‐Incorporated Electron Transport Layers Exceeding 20% Efficiency

“…Such a shift implies the formation of the interaction between C 60 (main body of PCBM) and ClGD . Moreover, in comparison with unbonded ClGD, the vibration of acetylenic linkages (—C—C≡C—C—) of ClGD‐PCBM at around 2191.9 cm −1 was weakened, which may be attributed to the decline of the energy of the corresponding phonon modes due to the existence of π–π interaction between ClGD and PCBM . X‐ray photoelectron spectroscopy (XPS) was performed to further investigate the interaction between ClGD and PCBM.…”

Studies of Graphdiyne‐ZnO Nanocomposite Material and Application in Polymer Solar Cells

“…Figure (j,k) presents the Raman spectra of GD and GDZO, and it is observed that the Ag(2) pentagonal pinch mode of the GDZO shifted from 1399.2 cm −1 (pristine GD) to 1364.7 cm −1 (GDZO), and 1594.2 cm −1 (pristine GD) to 1583.1 cm −1 (GDZO), respectively. The redshifts of GDZO imply that the adduct between GD and ZnO is formed, and thus the energy of the corresponding phonon modes is declined and the bond of CC and CC is weakened, which explains that the vibration of acetylenic linkages (CCCC) at around 2183.3 cm −1 become weakened compared with the signal of the unbonded GD …”

Molecular Main Group Metal Hydrides

“…300 °C) in comparison to the ca. 550 °C needed to deposit silicon from SiH 4 . − Poly­(dihydrosilane) [SiH 2 ] n has been postulated to be an intermediate in the thermal or photoinitiated ring-opening polymerization (ROP) of cyclo -Si 6 H 12 , a process that eventually yields hydrogenated amorphous bulk silicon (a-SiH) . The formation of [SiH 2 ] n as an orange solid has been documented in the 1980s from the Wurtz-type reductive coupling of H 2 SiCl 2 with Li metal, while treatment of calcium silicide (CaSi) with HCl is reported to give a brown solid with the estimated composition SiH 0.9 .…”