Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes

Impact of stress on Fowler–Nordheim parameters effects on EEPROM threshold voltage

“…This reveals the effect of FN parameter evolution with cycling. The crossing at V g = À6.5 V corresponds to the limit between stress induced leakage current (SILC) [16][17][18] (V g > À6.5 V) and FN injection (V g < À6.5 V). For positive V g , I(V) curves change the same way with cycling except for the fact that the cross between FN current and SILC is not visible, probably due to the range of V g which is close to the limit and the cross might occur for V g < 6 V. These measurements are in good agreement with ones, also on capacitors, in [13].…”