Applied surface analysis in magnetic storage technology

Windeln, Johannes; Bram, Christian; Eckes, Heinz‐Ludwig; Hammel, Dirk; Huth, Johanna; Marien, Jan; Röhl, Holger; Schug, C.; Wahl, Michael; Wienss, A.

doi:10.1016/s0169-4332(01)00277-x

Cited by 24 publications

(5 citation statements)

References 12 publications

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“…[1][2][3][4][5][6] The interest in carbon nitride has been renewed due to its potential as an electronic thin film for both cold cathode displays 7 and electrode materials in electrochemical studies of water treatment. 8 Electronic properties have been reported for both hydrogenated and nonhydrogenated amorphous carbon nitride.…”

Section: Introductionmentioning

confidence: 99%

Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen

Miyajima

Adamopoulos

Henley

et al. 2008

Journal of Applied Physics

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In this study, we investigate the effect of the inclusion of nitrogen in amorphous carbon thin films deposited by pulsed laser deposition, which results in stress induced modifications to the band structure and the concomitant changes to the electronic transport properties. The microstructural changes due to nitrogen incorporation were examined using electron energy-loss spectroscopy and Raman scattering. The band structure was investigated using spectroscopic ellipsometry data in the range of 1.5-5 eV, which was fitted to the Tauc Lorentz model parametrization and optical transmittance measurements. The dielectric constant evaluated using optical techniques was compared to that obtained with electrical measurements, assuming a Poole-Frenkel type conduction process based on the best fits to data. The electrical conduction mechanism is discussed for both low and high electric fields, in the context of the shape of the band density of states. By relating a wide range of measurement techniques, a detailed relationship between the microstructure, and the optical and the electrical structures of a-CN x films is obtained. From these measurements, it was found that, primarily, the change in density of the film, with increasing nitrogen pressure, affects the band structure of the amorphous carbon nitride. This is due to the fact that the density affects the stress in the film, which also impacts the localized states in the band gap. These results are supported by density of states measurements using scanning tunneling spectroscopy.

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Section: Introductionmentioning

confidence: 99%

Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen

Miyajima

Adamopoulos

Henley

et al. 2008

Journal of Applied Physics

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“…The SIMS technique has a surface sensitivity of only the outermost 1-3 monolayers (~1 nm) of the sample which implies a relatively high depth resolution for depth profiling [12]. To reduce SIMS matrix effects, associated molecular species, consisting of a backscattered or re-ejected primary Cs ion and a sputtered neutral M atom, were detected as characteristic secondary ions.…”

Section: Film Preparationmentioning

confidence: 99%

Analytical characterization of thin carbon films

Ohr¹,

Schug²,

Wahl³

et al. 2003

Anal Bioanal Chem

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CH(x) films on silicon substrates deposited by a Mesh Hollow Cathode Process (MHC) were analyzed by various techniques. The films were produced with varying deposition times, resulting in thicknesses ranging from ~2-20 nm. X-Ray Reflectivity (XRR) was used to determine the film thicknesses and the deposition rate. A good correlation of measured XRR thicknesses with SIMS sputter depths down to the film-substrate transition was found. An AFM-based nanoscratching technique was applied to test the wear resistance of the thin overcoats. The MHC films reveal slightly decreasing scratch resistance for reduced film thicknesses, which can be explained by a higher fraction of soft interface zones for thinner films. This is in accordance with Raman spectroscopic measurements in the visible spectral range which were carried out to examine the carbon bonding properties. Combined analysis of G peak position and D/G peak intensity ratio indicates a more graphitic structure for film thicknesses less than 10 nm.

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“…Amorphous carbon(a-C)is well-known for its excellent hardness and chemically inertness [1][2][3][4]. It is widely used as a protective coating for magnetic recording media [5][6][7], biomedical devices.a-C thin films can be deposited by any non-equilibrium processes e.g. pulse laser deposition (PLD), magnetron sputtering (MS), etc.…”

Section: Introductionmentioning

confidence: 99%

Influence of oxygen on growth of carbon thin films

Kumar

Gupta

Phase

et al. 2018

AIP Conference Proceedings

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In this work we studied the influence of oxygen gas on growth of carbon thin films in a magnetron sputtering process. X-ray absorption spectroscopy (XAS), x-ray and neutron reflectivity techniques were used to probe carbon thin films deposited with and without oxygen at room temperature. XAS in particularly x-ray absorption near edge spectroscopy (XANES) is powerful technique to identify the nature of hybridization of carbon atoms with other elements. In a XANES pattern, presence of C=O and CO bonds is generally observed in spite of the fact that oxygen has not been deliberately included in the growth process. In order to confirm the presence of such features, we introduced a small amount of oxygen at 1% during the growth of carbon thin films. Though such additions do not affect the number density as observed by x-ray and neutron reflectivity, they severally affect the C K-edge spectra as evidenced by an enhancement in carbon-oxygen hybridization. Observed results are helpful in analyzing the C K-edge spectra more confidently.

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Applied surface analysis in magnetic storage technology

Cited by 24 publications

References 12 publications

Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen

Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen

Analytical characterization of thin carbon films

Influence of oxygen on growth of carbon thin films

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