Applications of integrated circuit technology to microwave frequencies

Sobol, H.

doi:10.1109/proc.1971.8365

Cited by 48 publications

(14 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This experimental result is consistent with claims made in [4] based solely on analytical work. Contrary to concerns raised in [3] and [8], our measurements and analysis both show that the losses incurred by the use of a sufficiently thin adhesion layer are well below that induced by the bulk metal and substrate losses.…”

Section: Discussionsupporting

confidence: 92%

“…Within the manufacturing domain, it is well known that chemical reactions between the thin film and ceramic substrate are necessary for strong adhesion to the ceramic substrate [6]. Titanium, chromium, or tantalum can be used as an adhesion layer on oxides and nitrides to allow deposition of other less adhesive films such as copper [4]- [7]. Unfortunately, these metals have a significantly lower conductivity than Cu, which could lead to increased conductor losses.…”

Section: Multilayered Thin-film Metal Systemsmentioning

confidence: 99%

“…Hence, for microstrip on LTCC, where currents concentrate at the interface between the metal conductor line and the substrate where the highresistance adhesion layer resides, significant losses may also be expected. Sobol [4] provides an overview of thin-film technologies within the context of early microwave circuit integration efforts, and includes an analytical expression for resistive losses in stacked metal which suggests that losses should be low. However, Denlinger [3] suggests the opposite may be true for three-metal systems.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Metal Layer Losses in Thin-Film Microstrip on LTCC

Fund

Kuhn

Wolf

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

View full text Add to dashboard Cite

Thin-film microstrip transmission lines fabricated using a Ti adhesion layer followed by layered Cu, Pt, and Au films are measured to determine tradeoffs between manufacturability issues and microwave performance. Since Ti metal has approximately 25 times the resistance of Cu, and currents in a microstrip line flow mainly at the interface with the substrate where the Ti is located, there is the possibility of increased RF signal losses with this structure. It is found that Ti adhesion layers of ≤200-nm thickness cause minimal loss through 40 GHz on DuPont 9K7 low-temperature cofired ceramic substrates, so there is no significant electrical penalty for employing a metal stackup optimized for mechanical durability. These measurements, together with analysis and simulations suggest this will hold in general as long as the thinner, higher resistance adhesion metal is well below one skin depth in thickness at the operating frequency.

show abstract

Section: Discussionsupporting

confidence: 92%

Section: Multilayered Thin-film Metal Systemsmentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Metal Layer Losses in Thin-Film Microstrip on LTCC

Fund

Kuhn

Wolf

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

View full text Add to dashboard Cite

show abstract

“…Owing to the still immature silicon IC technology in the early 1970s when yields were be as low as 10% or so, there was considerable debate that is well captured by Sobol [9] on whether microwave integrated circuits which contain a few transistors but many passive components are more economically realized in hybrid form on alumina substrates instead of on monolithic ICs. The consensus then leaned towards the hybrid integrated circuit (HIC), although it also went by the more ambiguous name of microwave integrated circuit (MIC).…”

Section: Microwave Integrated Circuits: Hybrid Vs Monolithicmentioning

confidence: 99%

CMOS microwave and millimeter-wave ICs: The historical background

Abidi

2014

2014 IEEE International Symposium on Radio-Frequency Integration Technology

View full text Add to dashboard Cite

Fully integrated microwave IC's have been in development since the 1970s. The move in recent years to complex microwave and millimeter-wave CMOS subsystems has prompted a considerable activity which must proceed in light of past developments and discoveries. This paper offers a perspective on pre-CMOS experience with active microwave circuits on a chip, some of which operated at 60 GHz.While a market for millimeter-wave consumer devices has yet to mature, there is enough research at hand to show that millimeter-wave electronics are feasible in the 60 to 77 GHz in state-of-the-art CMOS technology. It seems likely-or at least so the thinking goes-that the very existence of functional CMOS electronics, even antennas, which can be integrated with digital signal processing should pry open applications that lay dormant because of high cost. But millimeter-wave CMOS is not a straightforward extrapolation of RF-CMOS circuit design; it is a different circuit approach altogether, with roots that run much deeper than RF-CMOS. It is my purpose here to bring to light some of this history.

show abstract

“…be the light speed 3×10 8 m/s, hence, ε reff is the effective dielectric constant of the material as shown in equation (4)[9].…”

mentioning

confidence: 99%

A novel design to prevent crosstalk

Huang

Chen

et al. 2007

TENCON 2007 - 2007 IEEE Region 10 Conference

View full text Add to dashboard Cite

Modern electronics products must have improved characteristics, including high-speed, high-density, and lowervoltage operations. With such designs, a poor PCB (printed circuit board) layout in the signal integrity (SI) system is affected by the noise and becomes unstable. Crosstalk is a major noise that interferes with SI. Generally, a guard trace is added between Victim and the other the Aggressor to prevent crosstalk. Two grounded vias are added between two ends of this guard trace, respectively, for reducing crosstalk. With the working frequency being higher and higher, crosstalk interferes more and more serious. Even, this guard trace will be as one noise source to affect Victim. In this paper, we present the effects of a guard trace with the optimal number of grounded vias that gives the maximum efficiency for preventing crosstalk in parallel double micro-strip lines in a high-speed PCB layout. In comparison with a guard trace with two terminal grounded vias, our swing of the near-end crosstalk is its 37%, and our swing of far-end crosstalk is its 45%.

show abstract

Applications of integrated circuit technology to microwave frequencies

Cited by 48 publications

References 29 publications

Metal Layer Losses in Thin-Film Microstrip on LTCC

Metal Layer Losses in Thin-Film Microstrip on LTCC

CMOS microwave and millimeter-wave ICs: The historical background

A novel design to prevent crosstalk

Contact Info

Product

Resources

About