Applications of atomic layer deposition to nanofabrication and emerging nanodevices

Kim, Hyungjun; Lee, Han‐Bo‐Ram; Maeng, W. J.

doi:10.1016/j.tsf.2008.09.007

Cited by 552 publications

(369 citation statements)

References 216 publications

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“…[3][4][5] The unique properties of the ALD method also meet the demanding requirements of industries such as semiconductors and microelectronics: indeed, they have been widely used for nanoscale device fabrication. 6 As distinct from conventional temporal ALD, which has an alternating sequence of precursor exposure, spatial ALD (SALD) is a high throughput ALD method, which is compatible with flexible continuous substrates and large scale thin film production. 7 The concept of spatial ALD leads to the same sequence of precursor and purge gas exposure as conventional temporal ALD.…”

Section: Introductionmentioning

confidence: 99%

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Aghaee

Maydannik

Johansson

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80-120 C) were used to grow moisture barrier TiO 2 films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å /cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO 2 films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO 2 , but the deposition time could be reduced using SALD. The TiO 2 films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 Â 10 À4 g day À1 m À2 (38 C and 90% RH) was measured for 20 nm of TiO 2 film deposited by plasma-assisted ALD.

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Section: Introductionmentioning

confidence: 99%

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Aghaee

Maydannik

Johansson

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The chemisorption also ensures the uniform and conformal coverage independent of the surface morphology. [1][2][3][4][5] ZnO has recently attracted considerable attention because of its versatility in a number of applications, such as sensors and photovoltaic devices [6,7]. It can be doped with aluminium to increase its conductivity, and be used as transparent conductive oxide layer [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Epitaxial ZnO layers have been grown with a number of methods [15][16][17], the mobility of these layers was typically between 10 and 100 cm 2 /Vs and the carrier concentrations around 10 17 -10 20 /cm 3 . There have been a few reports on conductive epitaxial ZnO layers doped with Ga or Al [18,19].…”

Section: Introductionmentioning

confidence: 99%

Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

et al. 2014

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The possibility of depositing conductive epitaxial layers with atomic layer deposition has been examined. Epitaxial ZnO layers were grown on GaN and doped with Al. The resistivity of the epitaxial layers is between 0.6 and 2*10 -4 Ωcm with both the mobilities and the carrier concentrations very high. The source of the high carrier concentration was found to be a combination of Al and Ga doping, the latter resulted by Ga atoms diffusing into the ZnO from the GaN substrate.

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“…24,[27][28][29]31 Nonetheless, it is widely acknowledged that atomic layer deposition ͑ALD͒ is the key tool to deposit innovative materials for fabricating a range of emerging nanostructures and nanodevices because it provides the capability to grow smooth and conformal films at relatively low temperatures and on large areas with an extremely accurate thickness control. 39 43 La͑ i PrCp͒ 3 is an interesting ALD precursor due to its relatively high vapor pressure ͑i.e., good volatility͒ stemming from the bulky alkyl group addition to the Cp ring. 44 In fact, La͑ i PrCp͒ 3 has been previously utilized in combination with H 2 O for the ALD growth of La 2 O 3 / Si stacks.…”

Section: Introductionmentioning

confidence: 99%

O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Lamagna

Wiemer

Perego

et al. 2010

Journal of Applied Physics

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The hexagonal phase of La2O3 is obtained upon vacuum annealing of hydroxilated La2O3 films grown with atomic layer deposition at 200 °C using La(PirCp)3 and O3. A dielectric constant value of 24±2 and 22±1 is obtained on Si-based and Ge-based metal-oxide-semiconductor capacitors, respectively. However, the relatively good La2O3 dielectric properties are associated with significant interface reactivity on both semiconductor substrates. This leads to the identification of a minimum critical thickness that limits the scaling down of the equivalent oxide thickness of the stack. These findings are explained by the spontaneous formation of lanthanum silicate and germanate species which takes place during the growth and also upon annealing. Although the ultimate film thickness scalability remains an unsolved concern, the use of an O3-based process is demonstrated to be a suitable solution to fabricate La2O3 films that can be successfully converted into the high-k hexagonal phase.

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Applications of atomic layer deposition to nanofabrication and emerging nanodevices

Cited by 552 publications

References 216 publications

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

O 3 -based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

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