“…Cadmium telluride is a well-known compound semiconductor, which is intensively used as a material for uncooled radiation detectors, photorefractive and electrooptic components, laser windows and substrates for fabrication of IR-source devices [1]. All above applications require homogeneous single crystalline samples with minimum amount of extended and bulk defects.…”
SEM observation of non-typical macrodefects in the form of needle-like second phase particles in highly doped CdTe:Cr single crystals, grown by the modified physical vapour transport method, was reported. They form regular network parallel to the {111} and {100} planes. In the combined analyses using energy dispersive X-ray profiling and high-angle annular dark-field elemental mapping, it has been determined that the observed needle-like aggregates are composed of Cr-Te intermetallic compound, most probably cadmium doped Cr3Te4.
“…Cadmium telluride is a well-known compound semiconductor, which is intensively used as a material for uncooled radiation detectors, photorefractive and electrooptic components, laser windows and substrates for fabrication of IR-source devices [1]. All above applications require homogeneous single crystalline samples with minimum amount of extended and bulk defects.…”
SEM observation of non-typical macrodefects in the form of needle-like second phase particles in highly doped CdTe:Cr single crystals, grown by the modified physical vapour transport method, was reported. They form regular network parallel to the {111} and {100} planes. In the combined analyses using energy dispersive X-ray profiling and high-angle annular dark-field elemental mapping, it has been determined that the observed needle-like aggregates are composed of Cr-Te intermetallic compound, most probably cadmium doped Cr3Te4.
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