Application-Oriented Unipolar Switching SiC Devices

High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena

“…SiC in particular has been seen as an ideal semiconductor material for high voltage power devices, due to its high critical breakdown electric field and large thermal conductivity [2,3]. We have focused on the high temperature operational capabilities of SiC devices, and studied the switching behavior of SiC Schottky barrier diodes (SBD) and JFETs under extremely high ambient temperature [4,5,6].…”

1710-V 2.77-m/spl Omega/cmsub 2 4H-SiC trenched and implanted vertical junction field-effect transistors

“…For example, for VJFETs that require no epitaxial regrowth where gating is provided by implanted vertical p -n junction [6], a record low of 5 m cm is achieved with a blocking voltage of 600 V at V, resulting in a FOM of 72 MW/cm . For VJFETs that require epitaxial regrowth to form an internal lateral JFET to provide gate control [1], [2], the highest FOM of 490 MW/cm is reported for a 3.5 kV normally-on VJFET [1], while a slightly lower FOM of 407 is realized for a 5.3 kV normally-off VJFET with m cm at V and A/cm [2]. Note also that the best value reported for 4H-SiC bipolar junction transistors (1.8 kV, 10.8 m cm at 193 A/cm ) to date is 300 MW/cm [11].…”

“…One way to get around the problems is to develop oxide-free SiC power switches. 4H-SiC VJFETs that require an expensive epitaxial regrowth have been demonstrated [1], [2]. Trenched VJFETs without epitaxial regowth have also been reported [6], achieving the lowest ever specific on-resistance ( ) of 5 m cm for a normally-on VJFET blocking up to 600 V at V and a corresponding figure-of-merit (FOM) of MW/cm .…”

Demonstration of the first SiC power integrated circuit

“…SiC power JFETs, however, are very attractive [2][3][4][5][6]. First, all the junctions are made of SiC, which means the device can fully benefit from the high critical electric field of SiC without being compromised by the inclusion of other materials and the resultant lower interface quality.…”