Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Abstract

Single-event effects (SEEs) in integrated circuits and devices can be studied by utilizing ultra-fast pulsed laser system through Two Photon Absorption process. This paper presents technical ways to characterize key factors for laser based SEEs mapping testing system: output power from laser source, spot size focused by objective lens, opening window of Pockels cell, and calibration of injected laser energy. The laser based SEEs mapping testing system can work in a stable and controllable status by applying these methods. Furthermore, a sensitivity map of a Static Random Access Memory (SRAM) cell with a 65 nm technique node was created through the established laser system. The sensitivity map of the SRAM cell was compared to a map generated by a commercial simulation tool (TFIT), and the two matched well. In addition, experiments in this paper also provided energy distribution profile along Z axis that is the direction of the pulsed laser injection and threshold energy for different SRAM structures.

Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research

“…There are two typical laser SEEs testing processes, single photon absorption (SPA) and two photon absorption (TPA), which are described in detail by several studies [5][6][7]. Due to the presence of metal layers on the top surface of most IC components, ultra-fast laser pulses are typically injected from the bottom side (i.e., the substrate side) and extra charges would be generated in desired areas by the TPA mechanism.…”

“…Due to the presence of metal layers on the top surface of most IC components, ultra-fast laser pulses are typically injected from the bottom side (i.e., the substrate side) and extra charges would be generated in desired areas by the TPA mechanism. With specifics of laser source, an approximate value of the number of generated charges can be calculated by a deduced equation [7], which is a benefit for SEE laser testing.…”

“…The schematic and profile of this laser system are shown in Figure 1. More details for the laser system have been described by the preceding paper [7].…”

“…2020, 10, x FOR PEER REVIEW 2 of 16 from the bottom side (i.e., the substrate side) and extra charges would be generated in desired areas by the TPA mechanism. With specifics of laser source, an approximate value of the number of generated charges can be calculated by a deduced equation [7], which is a benefit for SEE laser testing. Sensitivity mapping technology is a significant branch of SEE laser testing.…”

Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics

“…Other complementary methods use pulsed-laser or X-ray based radiation that are almost exclusively focused to point-like beams, then scanned across a device to identify the regions that generate the highest number of upsets. [11][12][13] Another approach is to simulate fault injection to observe how a device responds when a certain, known component is corrupted. 14,15 These techniques significantly speed up the characterization process.…”