Application of turbulence modeling to the integrated hydrodynamic thermal-capillary model of Czochralski crystal growth of silicon

Oxygen-transport phenomena in a small silicon Czochralski furnace

“…It is believed that before arriving at the melt/ crystal interface, most of the dissolved oxygen is evaporated into the gas phase through the melt/gas interface via the chemical reaction SiðlÞ þ OðlÞ3 SiOðgÞ at the melt/gas interface. In recent years, many numerical analyses [1][2][3][4][5][6][7] have been conducted on melt flow and oxygen transport in silicon melt. These have helped us greatly in understanding the transport mechanism.…”

“…These have helped us greatly in understanding the transport mechanism. However, in these numerical simulations, the gas-phase transport phenomena were neglected and the boundary condition for the diffusion equation at the melt/gas interface was considered to be either a zero oxygen concentration [1,3,4] or a constant evaporation coefficient [5][6][7]. The zero oxygen concentration boundary condition implies that there is no diffusion resistance in the gas phase.…”

The influence of crystallographic orientation on the wetting of silicon on quartz single crystals

“…Moreover a detailed physical-chemical understanding of reactive wetting between liquid silicon melt and SiO 2 is important for the advanced crystal growth of silicon [16][17][18][19][20][21][22][23][24][25][26][27]. Several wetting experiments with silicon melt on fused quartz have been reported in the literature [25][26][27], and complex dynamical spreading effects have been observed.…”

Effects of temperature coefficient of surface tension on oxygen transport in a small silicon Cz furnace

“…In recent years, many numerical analyses [1][2][3][4][5][6][7][8][9][10][11] have been conducted on the melt flow and the oxygen transport in the silicon melt. In these works, the Marangoni effect has not been taken into account.…”