Application of the ferroelectric materials to ULSI memories

Tarui, Yasuo; Hirai, Tadahiko; Teramoto, Kazuhiro; Koike, Hiroshi; Nagashima, Kazuhito

doi:10.1016/s0169-4332(96)00963-4

Cited by 68 publications

(32 citation statements)

References 21 publications

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“…As a memory device, the ferroelectric-gate field-effect transistor (FeFET) has attracted much interest [1,2,3,4,5,6,7]. It has many features, such as non-volatile memory function, voltage driven write operation, nondestructive read operation, and possible compact 4 F 2 cell size ( F : feature size) [1,3].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

2019

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Electron backscatter diffraction (EBSD) was applied to investigate the grain size and orientation of polycrystalline CaxSr1–xBi2Ta2O9 (CxS1–xBT) films in ferroelectric-gate field-effect transistors (FeFETs). The CxS1–xBT FeFETs with x = 0, 0.1, 0.2, 0.5, and 1 were characterized by the EBSD inverse pole figure map. The maps of x = 0, 0.1, and 0.2 showed more uniform and smaller grains with more inclusion of the a-axis component along the film normal than the maps of x = 0.5 and 1. Since spontaneous polarization of CxS1–xBT is expected to exist along the a-axis, inclusion of the film normal a-axis component is necessary to obtain polarization versus electric field (P–E) hysteresis curves of the CxS1–xBT when the E is applied across the film. Since memory windows of FeFETs originate from P–E hysteresis curves, the EBSD results were consistent with the electrical performance of the FeFETs, where the FeFETs with x = 0, 0.1, and 0.2 had wider memory windows than those with x = 0.5 and 1. The influence of annealing temperature for C0.1S0.9BT poly-crystallization was also investigated using the EBSD method.

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Section: Introductionmentioning

confidence: 99%

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

2019

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“…As a nonvolatile memory, ferroelectric-gate field-effect-transistors (FeFETs) have many advantages in high-density integration, low power dissipation, non-destructive readout operation, and good scalability [1]. A variety of FeFETs had been investigated over the past decades [2,3,4,5,6,7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

Sakai

Takahashi

2010

Materials

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We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1−x (Hf-Al-O) and Pt/SrBi2Ta2O9/HfO2 gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more than 2 × 106 after 12 days, and the decreasing rate of this ratio was so small that the extrapolated drain current ratio after 10 years is larger than 1 × 105. A fabricated self-aligned gate Pt/SrBi2Ta2O9/Hf-Al-O/Si FET revealed a sufficiently large drain current ratio of 2.4 × 105 after 33.5 day, which is 6.5 × 104 after 10 years by extrapolation. The developed FeFETs also revealed stable retention characteristics at an elevated temperature up to 120 °C and had small transistor threshold voltage (Vth) distribution. The Vth can be adjusted by controlling channel impurity densities for both n-channel and p-channel FeFETs. These performances are now suitable to integrated circuit application with nonvolatile functions. Fundamental properties for the applications to ferroelectric-CMOS nonvolatile logic-circuits and to ferroelectric-NAND flash memories are demonstrated.

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“…To simplify the destructive readout and higher cost issue, ferroelectric field effect transistor (FeFET) with direct integration of ferroelectric layer on the MOSFET was proposed. 22,31 The FeFET structure solves the problem of 1T-1C structure but suffers from ferroelectric-silicon reaction and interdiffusion due to the thermal instability of ferroelectric layer on direct integration with silicon. It is the reason why no FeFET-based FeRAM was commercially fabricated.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical properties of ferroelectric BiFeO₃/HfO₂gate stack for nonvolatile memory applications

Yadav¹,

Pandey²,

Tripathi

2018

J. Adv. Dielect.

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Difficulties in the fabrication of direct interface of ferroelectric BiFeO 3 on the gate of ferroelectric field effect transistor (FeFET) is well known. This paper reports the optimization and fabrication of ferroelectric/dielectric (BiFeO 3 /HfO 2 Þ gate stack for the FeFET applications. RF magnetron sputtering has been used for the deposition of BiFeO 3 , HfO 2 films and their stack. X-Ray diffraction (XRD) analysis of BiFeO 3 shows the dominant perovskite phase of (104), (110) orientation at 2θ ¼ 32 ○ at the annealing temperature of 500 ○ C. XRD analysis also confirms the amorphous nature of the HfO 2 film at annealing temperature of 400 ○ C, 500 ○ C and 600 ○ C. Multiple angle analysis shows the variation ion the refractive index between 2.98-3.0214 for BiFeO 3 and 2.74-2.9 for the HfO 2 film with the annealing temperature. Metal/Ferroelectric/Silicon (MFS), Metal/Ferroelectric/Metal (MFM), Metal/Insulator/Silicon (MIS), and Metal/Ferroelectric/Insulator/Silicon (MFIS) structures have been fabricated to obtain the electric characteristic of the ferroelectric, dielectric and their stacks. Electrical characteristics of the MFIS structure show the memory improvement from 2.7 V for MFS structure to 4.65 V for MFIS structure with 8 nm of buffer dielectric layer. This structure also shows the breakdown voltage of 40 V with data retention capacity greater than 9 Â 10 9 iteration cycles.

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Application of the ferroelectric materials to ULSI memories

Cited by 68 publications

References 21 publications

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

Structural and electrical properties of ferroelectric BiFeO₃/HfO₂gate stack for nonvolatile memory applications

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Application of the ferroelectric materials to ULSI memories

Cited by 68 publications

References 21 publications

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

Structural and electrical properties of ferroelectric BiFeO3/HfO2gate stack for nonvolatile memory applications

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Structural and electrical properties of ferroelectric BiFeO₃/HfO₂gate stack for nonvolatile memory applications