Application of pulsed laser deposited zinc oxide films to thin film transistor device

Shin, Paik Kyun; Aya, Yoichiro; Ikegami, Tomoaki; Ebihara, Kenji

doi:10.1016/j.tsf.2007.06.068

Cited by 59 publications

(44 citation statements)

References 11 publications

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“…[1][2][3][4]. Many research processes were developed to synthesize various morphologies of ZnO particles, including pulsed laser deposition (PLD) [5], chemical vapor deposition [6], spray pyrolysis [7], thermal evaporation [8], wet-chemical route [9][10][11][12][13], etc., where the wet-chemical route has attracted considerable attention due to its mild synthetic conditions. In the present research, we successfully synthesized several unique morphologies of zinc oxide, such as screw-like, rose-like, rod-like, sphere-like, etc.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of ZnO crystals with unique morphologies by a low-temperature solvothermal process and their photocatalytic deNO x properties

et al. 2010

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A series of unique morphologies of ZnO were synthesized by a simple mild solvothermal process using equimolar of Zn(NO 3 ) 2 /Zn(AC) 2 -hexamethylenetetramine (HMT) acting as precursors and ethylene glycol (EG) and triethylamine (TEA) as the dispersant and surfactant additive, respectively. When the as-prepared particles were further treated in 0.02 M HMT solution for such a long time as 72 h, screw-like and rose-like crystals with three-dimensional and developed structure could be formed. The deNO x photocatalytic activity was characterized and the analysis results showed that the modified ZnO crystals possessed a three-dimensionally developed structure and had higher deNO x photocatalytic activity compared to that of the as-prepared untreated ZnO.

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Section: Introductionmentioning

confidence: 99%

Synthesis of ZnO crystals with unique morphologies by a low-temperature solvothermal process and their photocatalytic deNO x properties

et al. 2010

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“…The integration of high-k dielectrics in ZnO TFTs as a potential gate dielectric has demonstrated advantages including increased on-to-off current ratios, reduced threshold voltage, and larger transconductance. Several authors [28][29][30] reported that reduction in leakage current and operating voltage is possible by using various high- dielectrics. Various gate dielectric reported which can be used, are Si 3 N 4 , (BaSr) TiO3, Al 2 O 3 , ZrO 2 , La 2 O 3 , HfO 2 .…”

Section: A Integration Of Zno Tft With High- Dielectricmentioning

confidence: 99%

Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends

Kandpal¹,

Gupta²

2016

Bulletin EEI

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This paper presents a review on recent developments and future trends in zinc oxide thin film transistors (ZnO TFTs) together with challenges involved in this technology. It highlights ZnO TFT as next generation choice over other available thin film transistor technology namely a -Si: H (amorphous hydrogenated silicon), poly-Si (polycrystalline silicon) and OTFT (organic thin film transistor). This paper also provides a comparative analysis of various TFTs on the basis of performance parameters. Effect of high - dielectrics, grain boundaries, trap densities, and threshold voltage shift on the performance of ZnOTFT is also explained.

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“…This result indicated that the existence of more oxygen interstitials resulted in the increment of electron-trapping centers. 13,14) With increasing the oxygen gas concentration the film resistivity gradually raised and then tended towards stability. As the oxygen gas concentration was more than 3.8%, the ZITO film possessed a semiconductor characteristic (>6.1 © 10 5 ³*cm) that could be applied in active layer of TFT devices.…”

Section: Structural and Electrical Characteristics Of Zitomentioning

confidence: 99%

Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System

et al. 2012

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This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiN x dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65 V/dec, a field-effect mobility (® FE ) of 2.57 cm 2 V ¹1 s ¹1, and an on/off current ratio (I on /I off ) of 10 4 . The small SS and an acceptable ® FE were associated with a smaller roughness and stable composition of ZITO channel layer.

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Application of pulsed laser deposited zinc oxide films to thin film transistor device

Cited by 59 publications

References 11 publications

Synthesis of ZnO crystals with unique morphologies by a low-temperature solvothermal process and their photocatalytic deNO x properties

Synthesis of ZnO crystals with unique morphologies by a low-temperature solvothermal process and their photocatalytic deNO x properties

Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends

Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System

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Application of pulsed laser deposited zinc oxide films to thin film transistor device

Cited by 59 publications

References 11 publications

Synthesis of ZnO crystals with unique morphologies by a low-temperature solvothermal process and their photocatalytic deNO x properties

Synthesis of ZnO crystals with unique morphologies by a low-temperature solvothermal process and their photocatalytic deNO x properties

Zinc Oxide Thin Film Transistors: Advances, Challenges and Future Trends

Characteristics of Thin-Film-Transistors Based on Zn&ndash;In&ndash;Sn&ndash;O Thin Films Prepared by Co-Sputtering System

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Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System