Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces

Bru‐Chevallier, C.; Baltagi, Y.; Guillot, G.; Hong, Kimin; Pavlidis, D.

doi:10.1063/1.368816

Cited by 5 publications

(3 citation statements)

References 11 publications

(9 reference statements)

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“…The properties of a number of heteroepitaxial interfaces have been investigated using PR or CER. These include GaAs/GaAlAs, 92 AlInAs/InP, 93 InGaAs/InP, 29,94 InGaAs/InAlAs, 95 ZnSe/GaAs, 8 -10,96 -102 CdTe/GaAs 103 and wurtzite InGaN/GaN. 24 Contactless electroreflectance measurements at 300 K were performed on two In x Ga 1 x As/InP (x D 0.53 (latticematched) and 0.75) samples containing three quantum wells grown by gas-source MBE.…”

Section: Heteroepitaxial Interfacesmentioning

confidence: 99%

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Study of semiconductor surfaces and interfaces using electromodulation

Pollak

2001

Surface & Interface Analysis

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The modulation spectroscopy technique of electromodulation (EM) is a major tool for the study and characterization of a number of semiconductor surfaces/interfaces and also for the evaluation of processinduced damage at surfaces. The most useful forms of EM are photoreflectance (PR) and contactless electroreflectance (CER) because they are sensitive to surface/interface electric fields and often yield the sharpest structure (third-derivative lineshape of the unmodulated spectrum in the case of bulk/thin-film material). For sufficiently high electric fields the PR/CER spectra may exhibit Franz-Keldysh oscillations, which are a direct measure of the relevant electric field. Furthermore, PR and CER require no special mounting of the sample and hence can be employed in situ (PR) or non-destructively on wafer-sized material. This article will discuss some recent applications of PR/CER for the investigation of a number of surfaces/interfaces, such as: process-induced effects on the surface of Si; Fermi-level pinning on a number of III-V materials, including low-temperature-grown GaAs (with excess As) and wurtzite GaN; Schottky barrier formation; process-induced damage (sputtering, reactive ion etching, chemically assisted ion beam etching) on III-V materials; homojunctions (GaAs/GaAs); heterojunctions (GaAlAs/GaAs, ZnSe/GaAs, CdTe/GaAs, AlInAs/InP, InGaAs/InP, InGaAs/InAlAs and wurtzite InGaN/GaN); and device structures such as heterojunction bipolar transistors and pseudomorphic high-electron-mobility transistors. A number of these studies have been performed in situ with an ultrahigh vacuum environment.

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Section: Heteroepitaxial Interfacesmentioning

confidence: 99%

“…16 are the PR results in the vicinity of E 0 of ZnSe (2.67 eV) and E 1 and E 1 C  1 of GaAs. 95 The top curve is for an Si-doped GaAs substrate. The bottom traces are for the ZnSe/GaAs system using different pump wavelengths.…”

Section: Heteroepitaxial Interfacesmentioning

confidence: 99%

Study of semiconductor surfaces and interfaces using electromodulation

Pollak

2001

Surface & Interface Analysis

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“…These characteristics are very similar to that reported by Watanabe and Yokoyama. 16 The full width at half maximum ͑FWHM͒ ⌬E of the PL peak can be used to deduce the 2DEG electron density, 17,18 and for an ideal 2DEG model…”

Section: Resultsmentioning

confidence: 99%

Optimization of InxGa1−xAs/InyAl1−yAs high electron mobility transistor structures grown by solid-source molecular beam epitaxy

Zheng

Radahakrishnan

Yoon

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSuppression of surface segregation of silicon dopants during molecular beam epitaxy of ( 411 ) A In 0.75 Ga 0.25 As ∕ In 0.52 Al 0.48 As pseudomorphic high electron mobility transistor structures Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecularbeam epitaxy Molecular beam epitaxial growth and characterization of strain-compensated Al 0.3 In 0.7 P/InP/Al 0.3 In 0.7 P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy Al 1−x In x As 1−y Sb y / GaSb heterojunctions and multilayers grown by molecular beam epitaxy for effectivemass superlatticesWe report on the optimization of InP-based In x Ga 1Ϫx As/In y Al 1Ϫy As pseudomorphic high electron mobility transistor ͑PHEMT͒ structures to achieve the highest possible two-dimensional-electron gas ͑2DEG͒ density and mobility. The layer structures are grown by solid-source molecular beam epitaxy with a valved phosphorus cracker cell. The single-side-doped PHEMT structure with a ␦-doping concentration of 6ϫ10 12 cm Ϫ2 exhibits a 2DEG sheet density of 3.93ϫ10 12 cm Ϫ2 with a mobility of 11100 cm 2 /V s at 300 K. The double-side-doped PHEMT structure with a bottom ␦-doping concentration of 1ϫ10 12 cm Ϫ2 and a top ␦-doping concentration of 5ϫ10 12 cm Ϫ2 gives a 2DEG sheet density of 4.57ϫ10 12 cm Ϫ2 with a mobility of 10 900 cm 2 /V s at 300 K. The electrical, optical and structural properties of the PHEMT structures were characterized by Hall, photoluminescence, and x-ray diffraction measurements.

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