1996
DOI: 10.1116/1.588616
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Application of optical lithography for high aspect ratio microstructures

Abstract: Articles you may be interested inAg2Te/As2S3: A high-contrast, top-surface imaging resist for 193 nm lithography J.Interest in thick photoresist applications is steadily growing. Besides the bump fabrication and wire interconnect technology, the process of patterning thick layer photoresists by UV lithography is specially qualified for applications in micro electro mechanical systems. Specialized equipment and new photoresists have been developed or are under development to cope with the new challenges in the … Show more

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Cited by 8 publications
(4 citation statements)
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“…While these resists are easier to strip than the SU-8, the attainable thickness is limited to only 100 µm in a single spin-coating step. Multiple spin coating has been used to form 1.5-mm-thick layers in the case of JSR THB-430N negative photoresist, but the obtained structures present an aspect ratio of 5 with very low resolution and poor sidewall quality [27]. All these limitations favor the use of SU-8 as the dominant photosensitive polymer for ultrathick microelectromechanical system (MEMS) fabrication today.…”
Section: Introductionmentioning
confidence: 99%
“…While these resists are easier to strip than the SU-8, the attainable thickness is limited to only 100 µm in a single spin-coating step. Multiple spin coating has been used to form 1.5-mm-thick layers in the case of JSR THB-430N negative photoresist, but the obtained structures present an aspect ratio of 5 with very low resolution and poor sidewall quality [27]. All these limitations favor the use of SU-8 as the dominant photosensitive polymer for ultrathick microelectromechanical system (MEMS) fabrication today.…”
Section: Introductionmentioning
confidence: 99%
“…Several studies on controlling the UV‐cured photoresist profile in the proximity photolithography process have been performed , . Chuang et al adjusted the wall profiles by effectively eliminating the UV light diffraction on the photoresist by using glycerol as an index‐matching material bridging the air‐gap between the photomask and photoresist.…”
Section: Introductionmentioning
confidence: 99%
“…The most common application for producing CF layers is based on the pigment method and employs a color photoresist. This technique comprises the following six stages [8,9]: (1) the formation of black matrix, (2) the coating of a color photoresist on a glass substrate surface, (3) the UV exposure through a photomask for insoluble layers, (4) the removal of unnecessary portions in a layer using a developing solution (e.g., a 1 wt % KOH aqueous solution) and the layer formation via a baking process, (5) Several studies on controlling the UV-cured photoresist profile in the proximity photolithography process have been performed [5][6][7]10]. Chuang et al [6] adjusted the wall profiles by effectively eliminating the UV light diffraction on the photoresist by using glycerol as an index-matching material bridging the air-gap between the photomask and photoresist.…”
Section: Introductionmentioning
confidence: 99%
“…However, economical and inexpensive optical lithography is also starting to be investigated since superior resists with high transmittance for UV light have been developed. [1][2][3] In conventional applications, optical lithography has been applied to plane wafers and it has been difficult to print patterns on various curved surfaces. If novel patterning technology is developed for printing various patterns on curved surfaces, it will open new applications of micromachines.…”
Section: Introductionmentioning
confidence: 99%