Application of model-based library approach to photoresist pattern shape measurement in advanced lithography

Yasui, Naoki; Isawa, Miki; Ishimoto, Toru; Sekiguchi, Kohei; Tanaka, Maki; Osaki, Mayuka; Shishido, Chie; Hasegawa, Norio; Cheng, Stone

doi:10.1117/12.846504

Cited by 3 publications

(4 citation statements)

References 11 publications

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“…We have already applied MBL to photoresist patterns [1] , etched poly patterns [5] , and Si 3 N 4 hard masks [8] , and confirmed the effectiveness of the MBL technique. However, all of these samples had only line and space (LS) patterns.…”

Section: Overviewsupporting

confidence: 56%

“…We employed a double trapezoid model for this investigation, similarly to what we did in our previous study [1] [5] . In these libraries, the sidewall angle (SWA) at upper trapezoid (Tt) and lower trapezoid (Tb) were set as the floating parameters to be estimated, and the other parameters were fixed as shown in Figure 3 in the estimation sequence.…”

Section: Measurement Condition For the Mbl Measurementmentioning

confidence: 97%

“…MBL estimates the pattern shape such as sidewall angle by comparing the actual SEM signal with its various simulated-SEM-signals, which are saved in the library, and calculates the CD at any height of the pattern. In a previous study, the MBL technique was applied to various photoresist pattern shape measurement [1] . We confirmed that the results of the MBL show close correlation with the results obtained by litho-simulation, but its accuracy was not discussed well.…”

Section: Introductionmentioning

confidence: 99%

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Verification and extension of the MBL technique for photo resist pattern shape measurement

et al. 2011

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In order to achieve pattern shape measurement with CD-SEM, the Model Based Library (MBL) technique is in the process of development. In this study, several libraries which consisted by double trapezoid model placed in optimum layout, were used to measure the various layout patterns. In order to verify the accuracy of the MBL photoresist pattern shape measurement, CDAFM measurements were carried out as a reference metrology. Both results were compared to each other, and we confirmed that there is a linear correlation between them. After that, to expand the application field of the MBL technique, it was applied to end-of-line (EOL) shape measurement to show the capability. Finally, we confirmed the possibility that the MBL could be applied to more local area shape measurement like hot-spot analysis.

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Section: Overviewsupporting

confidence: 56%

Section: Measurement Condition For the Mbl Measurementmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Verification and extension of the MBL technique for photo resist pattern shape measurement

et al. 2011

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“…With the help of MC modelling, not only the linewidth but also the 3D morphological shape of the structure can be derived [26][27][28][29][30][31][32][33][34][35][36][37][38]. Then, the model-based library (MBL) algorithm [28,34,37,[39][40][41][42] can be extended to 3D metrology of the CD by including many more geometrical structure parameters, such as top CD, bottom CD, height and sidewall angles. It has been experimentally verified that this characterization method is effective even down to patterned lines with a size of 10 nm [37].…”

Section: Introductionmentioning

confidence: 99%

Critical-dimension scanning electron microscope characterization of smoothly varying wave structures with a Monte Carlo simulation

Khan¹,

Yang²,

Xiao³

et al. 2021

J. Phys. D: Appl. Phys.

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Scanning electron microscopy (SEM) characterization of a smoothly varying nanograting structure (a Pt-coated Cr grid on a Si substrate) with a sinusoidal waveform has been carried out by a Monte Carlo (MC) simulation technique. Previous studies with critical-dimension (CD) SEM (CD-SEM) have mostly concerned line structures with sharp edges so that there is an obvious edge bloom in the linescan profile of secondary electrons. In contrast, the present grating structures prepared by a laser-focused atomic deposition technique have a smoothly varying waveform in the cross-sectional profile, which pose greater difficulty for quantitative structural characterization by SEM. The grating structure, with a fixed pitch of λ/2 as the period of the standing-wave laser light field, where λ is the wavelength of the corresponding laser light, can be used as an ideal nanoscale metrological length tool; therefore, it is important to characterize its structural features over a large deposited area by SEM imaging for quality control, with the aim of mass reproduction. The present work extends the CD characterization of MC simulation methods to more complex structures. Taking into account different experimental factors, i.e. primary electron beam parameters, geometrical parameters and material properties, the unknown geometrical parameters (i.e. base height, peak height, linewidth shrinkage and peak tilt angle) of the grating lines have been successfully extracted from the experimental linescan profiles of SEM images.

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The study of high-sensitive and accurate metrology method by using CD-SEM

2012

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The earliest semiconductor device manufacturing employed optical microscopes for measurement and control of manufacturing process. The introduction of Critical Dimension Scanning Electron Microscope (CD-SEM) in 1984 provided a tremendous increase in capability for process monitoring and has been the standard for in-line metrology for over 25 years. The advantages of CD-SEM are highly accurate and stable measurement reproducibility at very specific locations throughout the device. The evolution of CD-SEM in Metrology has included improved resolution, development of advanced measurement and pattern recognition algorithms, all required by performance improvement demands from the market.Current conventional metrology using in-line CD-SEM involves measuring about ten points per wafer (one or more points per one chip). At a magnification of over x150k (Field of View is about 1μm 2 ). In contrast, the area of measurement pattern on chip is much larger than the area of CD-SEM measurement (mm 2 : (on chip) versus μm 2 : (CD-SEM measurement)). This would mean that the result of CD-SEM measurement is influenced by local pattern variation.The very stringent requirements placed on in-line Metrology for the last couple of technology nodes has produced an additional metrology methodology, beyond the CD-SEM, that involves large area measurements with very high precision for the most critical levels. We will refer to this methodology as "Macro Area Measurements". We reported the applicability of using a CD-SEM Macro Area Measurements methodology in SPIE2011 (797124). In the results, we were able to validate a new methodology that we called "Macro Area Measurement" which is demonstrated to successfully detect small process variations with the same throughput and reduced damage to the pattern.This time, we investigated the additional applicability of using a CD-SEM Macro Area Measurement methodology in this paper.The areas investigated focused on the following points: 1) Measurement repeatability related to CD-SEM measurement 2) Optimization of the measurement parameters using new function 3) Verification of Macro Area Measurement with a leading -edge deviceIn the results, we are able to validate "Macro Area Measurements methodology which is demonstrated to successfully detect further small process variations with the almost same throughput and reduced damage to pattern.

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Application of model-based library approach to photoresist pattern shape measurement in advanced lithography

Cited by 3 publications

References 11 publications

Verification and extension of the MBL technique for photo resist pattern shape measurement

Verification and extension of the MBL technique for photo resist pattern shape measurement

Critical-dimension scanning electron microscope characterization of smoothly varying wave structures with a Monte Carlo simulation

The study of high-sensitive and accurate metrology method by using CD-SEM

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