Verification and extension of the MBL technique for photo resist pattern shape measurement

Abstract

In order to achieve pattern shape measurement with CD-SEM, the Model Based Library (MBL) technique is in the process of development. In this study, several libraries which consisted by double trapezoid model placed in optimum layout, were used to measure the various layout patterns. In order to verify the accuracy of the MBL photoresist pattern shape measurement, CDAFM measurements were carried out as a reference metrology. Both results were compared to each other, and we confirmed that there is a linear correlation between them. After that, to expand the application field of the MBL technique, it was applied to end-of-line (EOL) shape measurement to show the capability. Finally, we confirmed the possibility that the MBL could be applied to more local area shape measurement like hot-spot analysis.

Root-cause decomposition of line edge roughness and its application to cross-section profile prediction using top-view SEM images

“…4 Figure 5(a) shows the distributions of the SEM signal intensity and the measured LER along the x-axis for two samples exposed under different focus settings. Obtained profiles are compared with results separately measured using an atomic force microscope (AFM) on the same samples.…”