Application of low energy charged particle beams for chlorine analysis in silicon samples

El-Ashry, F.M.; Gocłowski, M.; Głowacka, L.; Jaskóła, M.; Marczewski, J.; Wolkenberg, A.

doi:10.1016/0168-583x(87)90377-6

Cited by 9 publications

(5 citation statements)

References 8 publications

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“…It should be realized that the statistical uncertainty in the case of PIXE is mostly dictated by the signal to background ratio. The uncertainty values in the table reveal that the signal to background ratio is more advantageous for the low energy PIXE case (1.5 MeV H + ) as compared to the high energy case (2.5 MeV H + ), even if the ionization cross section is larger for the latter, in agreement with the literature [8]. The dependence of the signal to background ratio as a function of proton energy will be the subject of further investigations.…”

Section: Resultssupporting

confidence: 84%

“…It was demonstrated that the simultaneous and self-consistent analysis of both the RBS and PIXE spectra, through the NDF code [7], allows for a more accurate interpretation of depth and concentration profiles of multilayer samples as compared to the conventional analysis of the data. A few studies illustrate the suitability of PIXE to measure the thickness of thin films on Si substrates [8,9]. However, to our knowledge, no critical comparison exists between the sensitivity limits of PIXE and RBS to detect small amounts of medium-light elements deposited on a silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

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RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon

Meersschaut

Käyhkö

Lenka

et al. 2013

AIP Conference Proceedings

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In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition Abstract. The performance, strengths and limitations of RBS and PIXE for the characterization of trace amounts of Cl in TiN thin films are critically compared. The chlorine atomic concentration in ALD grown TiN thin films on Si is determined for samples grown at temperatures ranging from 350°C to 550°C. We show that routine Rutherford backscattering spectrometry measurements (1.5 MeV He + ) and PIXE measurements (1.5 MeV H + ) on 20 nm thick TiN films allow one to determine the Cl content down to 0.3 at% with an absolute statistical accuracy reaching 0.03 at%. Possible improvements to push the sensitivity limit for both approaches are proposed.

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Section: Resultssupporting

confidence: 84%

Section: Introductionmentioning

confidence: 99%

RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon

Meersschaut

Käyhkö

Lenka

et al. 2013

AIP Conference Proceedings

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“…Thus Low Energy PIXE, (LE-PIXE) using proton of energy lower than 1 MeV could enhance significantly the peak of the background ratio for light elements [9]. It is thus promising for the characterization of elements of Z < 20 in surface and near surface regions [8][9][10][11][12]. In order to improve the sensitivity of the PIXE technique, for the determination of Aluminum layer deposited on SiC substrate, we should consider different energies of the proton incidence particle.…”

Section: Resultsmentioning

confidence: 99%

On the Characterization of Ultra Thin Al Films Deposited onto SiC Substrate Using PIXE Technique

Younes

Soueidan²,

Ferro

et al. 2011

AMR

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In this work the capability of the proton induced X-ray emission (PIXE) technique to monitor a rapid, non-destructive and accurate quantification of Al on or inside SiC is discussed. Optimization of PIXE acquisition parameters was performed using as reference, a thin Al film (2.5 nm) thermally evaporated onto silicon carbide substrate. In order to improve the sensitivity for Al detection and quantitative determination, a systematic study was undertaken using proton ion beam at different energies (from 0.2 to 3 MeV) with a different tilting angle (0°, 60°, and 80°). The limit of detection (LOD) was found to be lower than 0.02 nm. The optimum PIXE conditions (energy, angle) were applied for determining the Al doping concentration in thin (1 µm) 4H-SiC homoepitaxial layer. The Al concentration as determined by PIXE was found to be 3.9x1020 at/cm3 in good agreement with SIMS measurements, and the LOD was estimated to be 6x1018 at/cm3.

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“…Thus low energy PIXE, (LE-PIXE) using proton of energy lower than 1 MeV could enhance significantly the peak of the background ratio for light elements [9]. It is thus promising for the characterization of elements of Z < 20 in surface and near surface regions [8][9][10][11][12]. In order to improve the sensitivity of the PIXE technique, for the determination of Aluminum layer deposited on Si substrate, we should consider different energies of the proton incidence particle.…”

mentioning

confidence: 99%

On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique

Soueidan¹,

Nsouli²,

Ferro

et al. 2011

MSF

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In this work the capability of the proton induced X-ray emission (PIXE) technique to monitor a rapid, non-destructive and accurate quantification of Al on and in Si-based matrix is discussed. Optimization of PIXE acquisition parameters was performed using as reference a thin Al film (2.5 nm) thermally evaporated onto silicon substrate. In order to improve the sensitivity for Al detection and quantitative determination, a systematic study was undertaken using proton ion beam at different energies (from 0.3 to 3 MeV) with a different tilting angle (0°, 60°, and 80°). The limit of detection (LOD) was found to be lower than 0.2 nm. The optimum PIXE conditions (energy, angle) were applied for determining the Al doping concentration in thin (1 µm) 4H-SiC homoepitaxial layer. The Al concentration as determined by PIXE was found to be 3.9x1020 at/cm3 in good agreement with SIMS measurements, and the LOD was estimated to be 6x1018 at/cm3.

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Application of low energy charged particle beams for chlorine analysis in silicon samples

Cited by 9 publications

References 8 publications

RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon

RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon

On the Characterization of Ultra Thin Al Films Deposited onto SiC Substrate Using PIXE Technique

On the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission Technique

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