2012
DOI: 10.1039/c2cp41855j
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Application of F4TCNQ doped spiro-MeOTAD in high performance solid state dye sensitized solar cells

Abstract: Amid the investigation of solid-state dye-sensitized solar cells (SDSSCs), it was found that the incorporation of F4TCNQ into the solid hole-transporting materials (HTMs) spiro-MeOTAD forms a spiro-MeOTAD/F4TCNQ (strong electron acceptor) polaron charge-transfer complex. Careful examination indicates that the formation of the polaron charge-transfer complex not only facilitates the conductivity of HTMs but also inhibits the charge recombination across the interface of the heterojunction, i.e. photoanode/HTMs a… Show more

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Cited by 78 publications
(66 citation statements)
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“…Therefore, several kinds of dopants have been developed for spiro-OMeTAD, such as (pBrC 6 38 and F4-TCNQ. 39 However, many of them are usually applied by vacuum deposition or have a poor solubility in organic solvent. 33 Lithium bis(Tri°uoromethanesulfonyl)Imide (LiTFSI) has been found to be a crucial additive for spiro-OMe-TAD to get an increment of conductivity, 40 a better electron injection 41 and retarded recombination.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, several kinds of dopants have been developed for spiro-OMeTAD, such as (pBrC 6 38 and F4-TCNQ. 39 However, many of them are usually applied by vacuum deposition or have a poor solubility in organic solvent. 33 Lithium bis(Tri°uoromethanesulfonyl)Imide (LiTFSI) has been found to be a crucial additive for spiro-OMe-TAD to get an increment of conductivity, 40 a better electron injection 41 and retarded recombination.…”
Section: Introductionmentioning
confidence: 99%
“…The FF improves from 42.6 % for the cell with pristine Spiro‐OMeTAD to 67.1 % for the cell with 0.04 % DDQ added into the HTM. The improvement in the FF is attributed to the fact that the conductivity of the HTM with the 0.04 % doping ratio is higher than that of the pristine reference, which could reduce the hole‐transporting resistance and charge recombination and, thus, lower the series resistance and increase the value of J sc . A slight increase in the doping level to 0.2 % DDQ causes a decrease in the conductivity as a result of a large charge‐transfer resistance of the HTM in the ssDSCs and a decrease in the FF and J sc value.…”
Section: Resultsmentioning
confidence: 99%
“…There are two semicircles in the diagram; the right arc is obtained from the scan in the low‐frequency range, and it results from charge‐recombination resistance ( R 2 ) between the electrons in the conduction band of TiO 2 and the holes in the HTM. The left arc obtained from the scan in the high‐frequency range is rather complicated, as it results from series resistance ( R 0 ) and charge‐extraction resistance ( R 1 ) at the interface between the HTM and the counter electrode . As shown in the fitted parameter table, the device based on 0.04 % dopant has higher (66.4 vs. 38.7 Ω cm −2 ) charge‐recombination resistance ( R 2 ) than the pristine one, and consequently, if DDQ is added into the device, the rate of electron recombination at the TiO 2 /sensitizer/HTMs interface decreases, so the doped solar cell shows a higher V oc value.…”
Section: Resultsmentioning
confidence: 99%
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“…Therefore, judicious selection of light absorber with perovskite structure, organic hole transport layer, and metal contact is indispensable . On the other hand, optimization of amount of polysilanes into spiro‐OMeTAD solution and consideration of compatibility between polysilanes and metal and/or chemical dopants, such as Li, cobalt , silver , N(PhBr) 3 SbCl 6 , and F4TCNQ to increase hole concentration and mobility, are indispensable since doping of excess chemicals and metals into spiro‐OMeTAD solution would leads to degradation of light absorbers and photovoltaic properties , and affects stability of perovskite‐type solar cells.…”
Section: Resultsmentioning
confidence: 99%