Application of enhancement mode FET technology for wireless subscriber transmit/receive circuits

Glass, E.; Huang, Jane-Hwa; Staudinger, Joseph; Shields, M.; Martinez, Mario J.; Hartin, O.; Valentine, W.; Lan, E.

doi:10.1109/4.868036

Cited by 10 publications

(2 citation statements)

References 9 publications

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“…1, 2 In the past, both wet and dry selective etchings have been used in the fabrication of E-PHEMTs. Among PHEMT structures, devices with a strained InGaAs channel and AlGaAs gate are widely used to acquire the characteristics of low gate-leakage current and high speed.…”

Section: Introductionmentioning

confidence: 99%

High-performance, low-noise enhancement-mode pseudomorphic high-electron-mobility transistor with gate recession by citric acid/hydrogen peroxide selective etching

Wang

Lin

Huang

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inImproved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess Appl. Phys. Lett. 96, 203506 (2010); 10.1063/1.3430569Study of highly selective wet gate recess process for Al 0.25 Ga 0.75 As/GaAs based pseudomorphic high electron mobility transistors Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications An enhancement-mode pseudomorphic high-electron-mobility transistor ͑E-PHEMT͒ using a citric acid/hydrogen peroxide etching solution for gate recession is developed. The etch selectivity between GaAs and Al 0.2 Ga 0.8 As is more than 165 at 22°C, while the maximum transconductance for the fabricated device with the gate dimension of 160ϫ 0.25 m 2 reaches 502 mS/ mm at V ds = 2.7 V. Furthermore, at 12 GHz, the 1 dB compression output power and gain can reach 13.2 dB m and 17.9 dB, respectively. Operating at 12 GHz, the minimum noise figure at the bias conditions of V ds = 2 V and I ds = 11 mA decreases to 0.45 dB with the associated gain of 12.95 dB, which is comparable to, or even better than that of, reported low-noise depletion-or enhancement-mode PHEMT devices. The standard deviation of the pinch-off voltage for the E-PHEMT across a 4 in. diameter wafer could be as low as 50 mV.

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Section: Introductionmentioning

confidence: 99%

High-performance, low-noise enhancement-mode pseudomorphic high-electron-mobility transistor with gate recession by citric acid/hydrogen peroxide selective etching

Wang

Lin

Huang

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…1) GaAs-based enhancement-mode field effect transistors (FETs) have an important application in commercial power amplifiers for wireless handsets. 2) EHEMTs based on In 0:52 Al 0:48 As/In 0:53 Ga 0:47 As heterostructures have been monolithically integrated with depletion-mode HEMTs (DHEMTs) to construct high-speed digital circuits 3,4) on InP and GaAs substrates. In the fabrication process of EHEMTs on heterostructures latticematched to InP, the most critical fabrication process is the formation of gate electrodes on InAlAs/InGaAs heterostructures to achieve positive threshold voltages.…”

Section: Introductionmentioning

confidence: 99%

Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Metallization

Jang

Kim

Adesida

2006

jjap

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Enhancement-mode high electron mobility transistors (EHEMTs) were fabricated on In0.52Al0.48As/In0.53Ga0.47As heterostructures lattice-matched to InP substrates. Vertical scaling of device heterostructures was carried out to realize a positive threshold voltage with Ti/Pt/Au gates. Submicron EHEMTs utilizing Ti/Pt/Au were fabricated and their performances were compared with those of conventional EHEMTs with buried-Pt gates. DC I–V characteristics of both devices exhibited excellent pinch-off characteristics and very low output conductance. Output conductance measured for both devices showed that EHEMTs exhibit smaller kink effects than normal depletion-mode HEMTs (DHEMTs) due to the operating mode of EHEMTs with forward gate bias. EHEMTs with 0.18 µm Ti/Pt/Au gates exhibited a threshold voltage of 100 mV, peak transconductance of 810 mS/mm, and unity current-gain cut-off frequency ( fT) of 150 GHz, while those with buried-Pt gates exhibited a threshold voltage of 300 mV, peak transconductance of 880 mS/mm, and unity current-gain cut-off frequency ( fT) of 100 GHz. Studies on the thermal stabilities of the two types of gate metallization have been carried out. The Ti/Pt/Au gates exhibited better thermal stability than Pt/Ti/Pt/Au gates in terms of variation of threshold voltages and maximum transconductance values at elevated temperatures.

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Modulation‐Doped Field‐Effect Transistors (MODFET)

Zhu

Ferreyra

Morkoç̌

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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Conventional modulation‐doped field‐effect transistors (MODFETs) with unprecedented performance, e.g., a power gain of 15 dB at 190–235 GHz and a noise level of 1.2 dB with 7.2‐dB gain in the 90‐GHz range, have been demonstrated. Passivation process is of fundamental importance in the stability, good performance, and extension of device operative lifetime. We discuss strategies used to passivate the surface of GaAs and related compounds and GaN in the context of FETs. Recent research on the enhancement‐mode PMODFET (E‐PMODFET) variety for applications in high‐speed and low‐power digital circuits, and power amplifiers with single power supply is described. Reliability of MOSFET based on GaAs is reviewed to some extent. Scalability issues as well as progress in FinFET‐based on InGaAs channel are summarized. Also to be noted is that III–V compound semiconductors as alternative to Si as the channel material to improve the performance of metal‐oxide–semiconductor field‐effect transistors (MOSFETs) on Si platforms is a very attractive option for the next‐generation high‐speed integrated circuits but faces serious challenges because of the lack of a high‐quality and natural insulator. III‐V Nitride‐based HFETs showed tremendous performance in both high‐power RF and power‐switching applications. AlGaN/GaN based high power HFETs on SiC substrate with 60 nm gate lengths have achieved maximum oscillation frequency of 300 GHz. On‐resistance of 1.1∼1.2 Ω·mm as well as drain current of ∼0.9 A/mm was also achieved. For HFET devices operated in Class AB mode on GaN semi‐insulating substrates, a continuous wave power density of 9.4 W/mm was obtained with an associated gain of 11.6 dB and a power added efficiency of 40% at 10 GHz. III‐Nitride devices for power switching application has achieved near theoretical limit for vertical devices based GaN native substrates, and breakdown voltage as high as 1200 V and on resistance as low as 9 mΩ‐cm2 for lateral HFET devices on low‐cost silicon substrates. For AlGaN/GaN HFETs on high‐resistivity silicon substrates, promising results were also demonstrated. Because of the much larger 2DEG density in lattice‐matched InAlN/GaN HFETs, drain current as high as 2 A/mm was demonstrated, and the highest current gain cutoff frequency of 370 GHz was also reported on 7.5‐nm‐thick In In0.17Al0.83N barrier HFETs. Despite the above‐mentioned encouraging achievements, the degradation mechanisms are still not clear, which requires further investigation. The advent of high‐quality SiGe layers on Si substrates has paved the way for the exploration and exploitation of heterostructure devices in a Si environment. MODFETs based on the Si/SiGe have been achieved with extraordinary p ‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz.

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Application of enhancement mode FET technology for wireless subscriber transmit/receive circuits

Cited by 10 publications

References 9 publications

High-performance, low-noise enhancement-mode pseudomorphic high-electron-mobility transistor with gate recession by citric acid/hydrogen peroxide selective etching

High-performance, low-noise enhancement-mode pseudomorphic high-electron-mobility transistor with gate recession by citric acid/hydrogen peroxide selective etching

Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Metallization

Modulation‐Doped Field‐Effect Transistors (MODFET)

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