High-performance, low-noise enhancement-mode pseudomorphic high-electron-mobility transistor with gate recession by citric acid/hydrogen peroxide selective etching

Abstract

Articles you may be interested inImproved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess Appl. Phys. Lett. 96, 203506 (2010); 10.1063/1.3430569Study of highly selective wet gate recess process for Al 0.25 Ga 0.75 As/GaAs based pseudomorphic high electron mobility transistors Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications An enhancement-mode pseudomorphic high-electron-mobility transistor ͑E-PHEMT͒ using a citric acid/hydrogen peroxide etching solution for gate recession is developed. The etch selectivity between GaAs and Al 0.2 Ga 0.8 As is more than 165 at 22°C, while the maximum transconductance for the fabricated device with the gate dimension of 160ϫ 0.25 m 2 reaches 502 mS/ mm at V ds = 2.7 V. Furthermore, at 12 GHz, the 1 dB compression output power and gain can reach 13.2 dB m and 17.9 dB, respectively. Operating at 12 GHz, the minimum noise figure at the bias conditions of V ds = 2 V and I ds = 11 mA decreases to 0.45 dB with the associated gain of 12.95 dB, which is comparable to, or even better than that of, reported low-noise depletion-or enhancement-mode PHEMT devices. The standard deviation of the pinch-off voltage for the E-PHEMT across a 4 in. diameter wafer could be as low as 50 mV.

Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric

“…The pseudomorphic high-electron mobility transistor (PHEMT) operating in single positive voltage supply has recently attracted tremendous attention in amplifier circuits [1][2][3]. This can reduce circuit complexity and DC power consumption, which are beneficial to microwave power amplifier application.…”