Application of dual radio frequency inductive coupled plasma into CVD diamond growth

A Modified Plasma Immersed Solid-Phase Impurity Assisted Doping Geometry for the Creation of Highly Fluorescent Cvd Nanodiamond

“…Usually in the CVD process, methane and hydrogen gases are used to promote the diamond growth and depending on the user requirements or final application, different type of impurities can be added into the precursor gas mixture to obtain different types of color centers. Because the precursors are gases, contaminants in gas phase are mainly preferred for the efficient incorporation of impurity atoms and to form impurity-related color centers, however metal related impurities are rarely incorporate from the CVD system [7]. Since the group of impurities available in gas form is limited, the number of impurity-related color centers, that can be created within the diamond lattice from gas precursors are also restricted.…”

The lateral outward growth of single-crystal diamonds by two different structures of microwave plasma reactor

“…Single-crystal diamond (SCD) has broad application prospects as a superhard material. [1][2][3][4][5][6] Other physical and chemical properties of SCD are also excellent, such as its high thermal conductivity, high breakdown field, high optical transmittance, and low birefringence, and the unique spin coherence properties of the N-V center. [2][3][4] Based on the relevant characteristics, SCD can be applied in numerous areas of cutting-edge technology, such as in semiconductor power devices, high-energy particle detection, optical windows, Raman laser devices, and quantum computing.…”

“…[2][3][4] Based on the relevant characteristics, SCD can be applied in numerous areas of cutting-edge technology, such as in semiconductor power devices, high-energy particle detection, optical windows, Raman laser devices, and quantum computing. [1][2][3][4][5][6][7] At present, crystal size can restrict further applications in the field of frontier technology. Therefore, it is necessary to prepare large-size and high-quality SCD samples.…”

“…High pressure and high temperature (HPHT) and chemical vapor deposition (CVD) methods for preparing SCD are becoming more and more developed. 1,[5][6][7] Among these approaches, microwave plasma chemical vapor deposition (MPCVD) is an effective method for preparing large-size diamonds with a low dislocation density. 6,7 For the homoepitaxial lateral outward growth of SCD, the key is to effectively reduce the appearance of a polycrystalline diamond (PCD) rim and defects at the seed edges.…”

Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate

“…According to our past research, dual RF-ICP can be considered as an effective way to avoid these problems. Moreover, poly-crystal and single-crystal diamond films have been fabricated successfully by very low growth rates [24][25][26][27]. In this work, by adjusting growth condition, the growth rate of the SCD films have been greatly enhanced, and the maximum growth rate can exceed 18 µm/h.…”