Application of a gateless AlGaN/GaN HEMT sensor for diesel soot particulate detection

Sokolovskij, Robert; Zheng, Huarong; Li, Wenmao; Zhou, Guangnan; Wang, Qing; Zhang, Guoqi; Yu, Hongyu

doi:10.1016/j.snb.2021.130811

Cited by 4 publications

(1 citation statement)

References 55 publications

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“…For example, the highest sensing sensitivities for a pH sensor [13] and a Hg 2+ ion sensor [14] are 167.71 mV/pH and 0.3 µA/ppb, respectively. Besides, there are a few studies about the methods to improve the sensing performance by optimizing HEMT device structure such as gateless structure [15,16], gate-recessed structure [17,18] and extended-gate structure [19,20]. For gateless HEMT, the sensing distance between the surface sensing area and the 2DEG channel is scaled compared to the conventional GaN-based HEMT, which makes sensing sensitivity enhanced.…”

Section: Introductionmentioning

confidence: 99%

The Sensing Mechanism of InAlN/GaN HEMT

Liu

Dong

et al. 2022

Crystals

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The sensing mechanism of InAlN/GaN high electron mobility transistors (HEMTs) is investigated systematically by numerical simulation and theoretical analysis. In detail, the influence of additional surface charge on device performance and the dependence of surface sensing properties on InAlN barrier thickness are studied. The results indicate that the saturation output drain current Idsat and two-dimensional electron gas (2DEG) concentration increase with the increase of positive surface charge density, which decrease with the increase of negative surface charge. The influence of negative surface charge on device performance is more remarkable than that of positive surface charge. Additionally, the modulation ability of surface charge on device performance increases with the decrease ofInAlN barrier thickness. The modulation of surface charge on device performance and the influence of barrier thickness on surface sensing sensitivity are mainly attributed to the variation of the energy band structure, surface potential and 2DEG concentration in the HEMT heterostructure. This work provides important support for structural optimization design of GaN-based HEMT sensors.

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Section: Introductionmentioning

confidence: 99%

The Sensing Mechanism of InAlN/GaN HEMT

Liu

Dong

et al. 2022

Crystals

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AlGaN/GaN high electron mobility transistor for various sensing applications: A review

Bhat

Poonia

Varghese

et al. 2023

Micro and Nanostructures

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Ferroelectric domain modulated AlGaN/GaN field effect transistor

Tang

Lü

Cong

et al. 2022

Applied Physics Letters

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A two-dimensional electron gas (2DEG) in (Al, Ga) N/GaN heterojunction (AlGaN/GaN) is a key factor that affects the performance of GaN-based high electron mobility transistor (HEMT) devices. Previous studies have shown that the ferroelectric polarization can effectively control the density of the 2DEG at the AlGaN/GaN interface; however, the correlation between two-dimensional distribution of ferroelectric polarization (i.e., ferroelectric domains) and its ability to confine the 2DEG is yet to be investigated. In this work, ferroelectric domain-induced modulation of the 2DEG in the AlGaN/GaN heterostructure was characterized using microscopic as well as local transport measurement techniques. The results suggest direct evidence for effective ferroelectric domain engineering in GaN HEMTs, as predicted by theoretical calculations. Additionally, a prototype device was fabricated, where gating was realized by utilizing the polarization of the ferroelectric domain. Considering the nonvolatile and reconfigurable advantages of a ferroelectric domain, the E-mode, D-mode, and even multi-channel output characteristics were realized in the same device by artificially engineered ferroelectric domain structures. These results offer a promising solution for the contradiction between the 2DEG density and gate controllability in GaN HEMTs, thereby showing a great potential of GaN radio frequency devices with further scaled gate lengths down to a few nanometers in the future.

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Application of a gateless AlGaN/GaN HEMT sensor for diesel soot particulate detection

Cited by 4 publications

References 55 publications

The Sensing Mechanism of InAlN/GaN HEMT

The Sensing Mechanism of InAlN/GaN HEMT

AlGaN/GaN high electron mobility transistor for various sensing applications: A review

Ferroelectric domain modulated AlGaN/GaN field effect transistor

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