Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications

Chugh, Nisha; Kumar, Manoj; Haldar, Subhasis; Bhattacharya, Monika; Gupta, Rajeev

doi:10.1007/s12633-020-00881-9

Cited by 9 publications

(2 citation statements)

References 22 publications

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“…[11] Such devices can greatly alleviate the nonlinearity of resistances under the high current and the sensitivity of the cutoff frequency to external bias, thus enhancing the device linearity. [12] The implementation of DC-GaN-HEMTs substantially obtains higher power gain capability and cutoff frequency than SC devices, which are of great significances in terms of RF circuit designs. [13,14] Furthermore, DC-GaN-HEMTs are potential devices for radiation sensors due to an improvement of the heavy ion sensitivity and the proper switching ability by introducing a dual gate.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Cai,

Yao,

Geng

2024

Physica Status Solidi (a)

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A detailed analysis of self‐consistent potentials, electric fields, electron distributions, and transport properties of dual‐channel (DC) n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN high‐electron‐mobility transistors (HEMTs) is performed in this article. The 2D electron gas (2DEG) densities and mobility states limited by different scattering mechanisms in channel 1 and channel 2 are obtained, with varying values of doping concentrations, ambient temperatures, Al components, and thicknesses of the back barrier layer. The reduced and increased 2DEG densities are respectively observed in channel 1 and channel 2 with growing Al fractions and thicknesses of the AlxGa1−xN layer. Alloy disorder scattering exhibits a superior effect on carriers in channel 2 due to the lower barrier height and higher permeable electrons, which together with the interface roughness scattering severely depends on the thicknesses and Al fractions of the back barrier layer. Polar optical phonon scattering becomes important at higher temperatures. The trend of individual mobility in channel 1 is exactly opposite to that in channel 2. The parameter variation of the back barrier layer can effectively change the scattering characteristics of the main channel. Low‐temperature mobilities of n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN HEMTs under varied doping concentrations are also obtained. Finally, the results are verified by comparison with the technology computer‐aided design simulations for DC HEMTs.

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Section: Introductionmentioning

confidence: 99%

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Cai,

Yao,

Geng

2024

Physica Status Solidi (a)

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“…Although GaN devices have many advantages, they are still suffering from some problems such as short channel effect [ 7 , 8 , 9 ] and current collapse effect [ 10 , 11 , 12 ]. To solve these problems, some researchers proposed double channel GaN HEMTs [ 13 , 14 , 15 , 16 , 17 , 18 ], which contain two GaN/AlGaN heterojunction conductive channels. For devices with such structures, the current collapse effect is significantly weakened, as the lower barrier layer is far from the surface of the epitaxial layer.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

et al. 2022

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A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10−7 Ω·cm2 at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics.

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Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate

Lino,

Saravana Kumar,

Mohanbabu

et al. 2024

J. Electron. Mater.

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Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications

Cited by 9 publications

References 22 publications

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate

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Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications

Cited by 9 publications

References 22 publications

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate

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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors