Apparently complete grain boundary wetting in Cu–In alloys

Phase transformation and fracture behavior of Cu/In/Cu joints formed by solid–liquid interdiffusion bonding

“…This was attributed to the diffusion rate of Cu atoms along the grain boundaries of Cu 2 In was higher than that of inside the Cu 2 In grains, so that the Cu 7 In 3 phase preferred grew along the grain boundaries of Cu 2 In phase. This process can be explained by the theory of grain boundary coverage transition proposed by Straumal et al They observed the GB wetting transition can processed not only by the liquid phase in Cu-In system [23] but also by the second solid phase in Al-Mg and CuCo system [24,25]. In this paper, with the Cu atoms diffused in the In matrix continuously, the Cu content in the solder increased, and then the amount of Cu 7 In 3 phase increased too.…”

Influence of the grain boundary character on the temperature of transition to complete wetting in the Cu–In system

“…The Cu-In system has been chosen for this investigation because it is known that the GB wetting phase transition exists in this system [26] and values for T wmin and T wmax have already been determined [13]. According to the results of [13], the sample compositions were chosen to minimize the effect of the apparently complete wetting.…”

“…According to the results of [13], the sample compositions were chosen to minimize the effect of the apparently complete wetting. To investigate the real Cahn wetting, the equilibrium fraction of liquid in the system had to be between 0 and 0.15.…”

“…In polycrystalline samples, the transition from incomplete to complete GB wetting starts at a certain minimum temperature T wmin at GB with a combination of maximum r GB and minimum r SL , and finishes at a maximum temperature T wmax corresponding to a combination of minimum r GB and maximum r SL . In the previous work, these temperatures have been determined with the aid of conventional light microscopy or SEM for many systems exhibiting wetting [13][14][15][16][17][18]. This earlier work did not, however, consider how the wetting temperatures of individual GB were correlated with parameters describing their crystallographic characteristics.…”

Preface to the HTC 2012 special issue

“…The first covers the topic of wetting of ceramics by silicon alloys [1], the second discusses our current understanding of dissolutive wetting [2], and the third explores wetting and joining of high temperature materials based on diborides [3]. The section containing full manuscripts opens with a paper describing a new software tool for simulating interface morphology [4], followed by a series of papers on interface thermodynamics [5][6][7][8][9][10][11][12], and non-reactive and reactive wetting systems [13][14][15][16][17][18][19][20][21][22][23][24][25][26]. This is followed by a series of papers exploring the use of sessile drop experiments, reactive wetting, and applied joining and processing.…”