Apparatus for Measuring Resistivity and Hall Coefficient of Semiconductors

Dauphinee, T. M.; Mooser, E.

doi:10.1063/1.1715281

Cited by 78 publications

(9 citation statements)

References 2 publications

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“…[3][4][5] A number of reports exist on systems utilizing other methods and sample geometries for both direct current (dc) [6][7][8] and alternating current (ac) [9][10][11][12][13][14][15] measurements. In this paper, we describe some of the challenges encountered when designing a high temperature resistivity and Hall effect apparatus based on the VDP geometry and outline general solutions that greatly facilitate the use of this method at high temperatures.…”

Section: Introductionmentioning

confidence: 99%

Measurement of the electrical resistivity and Hall coefficient at high temperatures

Borup

Toberer

Zoltan

et al. 2012

Review of Scientific Instruments

241

215

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Study of laser megajoule calorimeter's thermal behaviour for energy measurement uncertainty optimisation Rev. Sci. Instrum. 84, 014902 (2013) Impedance spectroscopy on ceramic materials at high temperatures, considering stray fields and electromagnetic noise Rev. Sci. Instrum. 84, 015118 (2013) An apparatus for concurrent measurement of thermoelectric material parameters Rev. Sci. Instrum. 84, 013907 (2013) Casimir probe based upon metallized high Q SiN nanomembrane resonator Rev. Sci. Instrum. 84, 015115 (2013) Four-electrode impedance spectrometer for investigation of solid ion conductors Rev. Sci. Instrum. 84, 013902 (2013) Additional information on Rev. Sci. Instrum. The implementation of the van der Pauw (VDP) technique for combined high temperature measurement of the electrical resistivity and Hall coefficient is described. The VDP method is convenient for use since it accepts sample geometries compatible with other measurements. The technique is simple to use and can be used with samples showing a broad range of shapes and physical properties, from near insulators to metals. Three instruments utilizing the VDP method for measurement of heavily doped semiconductors, such as thermoelectrics, are discussed.

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Section: Introductionmentioning

confidence: 99%

Measurement of the electrical resistivity and Hall coefficient at high temperatures

Borup

Toberer

Zoltan

et al. 2012

Review of Scientific Instruments

241

215

View full text Add to dashboard Cite

show abstract

“…The argument can be extended to include many grains, in both series and parallel combinations. The Hall measurement is valid for d.c. and for low-frequency a.c. (3), and this is sometimes more convenient than the R-F methods. It is also convenient because it is applicable to ingots of any cross-sectional shape.…”

Section: A+bmentioning

confidence: 98%

Use of Hall Measurements in Evaluating Polycrystalline Silicon

Olshefski

Shombert²,

Weingarten³

1961

J. Electrochem. Soc.

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Hall measurements at room temperature have been used to determine the average net carrier density in polycrystalline silicon. The method does not require cutting of samples and destruction of the rods. Current contacts are made to the ends of a rod with strips of metal foil; Hall contacts are made with two titanium blades which close on the rod. Hall measurements made this way on single-crystal zone-refined rods agree with measurements on samples cut from the rods in the conventional manner. The average carrier densities measured in the polycrystalline rods have been correlated with the resistivities of these same rods after one, two, three floating zone passes. Measurement of Whole IngotsThe conventional bridge-shaped samples used for Hall measurements require that an ingot be sawed up and thus partially destroyed. It would obviously be advantageous to make Hall measurements on an ingot of semiconductor material without cutting it up (1). This was done with the apparatus ~ shown in Fig. 1. The holder was made of Lucite and was clamped between the poles of a Varian 4-in. electromagnet. The sample (which was a round ingot) was placed in the V-shaped blocks of Lucite and rested on a knife-edge titanium blade which formed one Hall contact. A pivoted Lucite arm carrying the other titanium blade Hall contact was placed on top of the sample and was held down with a nonmagnetic (lead) weight. The pivoted arm could be moved laterally by an adjusting screw to align the top blade accurately above the lower blade; this adjustment eliminated the IR voltage between the Hall contacts, so that the measured Hall voltage was zero when the magnetic field was zero. Current contacts to the sample were made on the ends of the ingot either by ultrasonic soldering with indium, by

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“…Constant current through the specimens was provided from a source of stability. For higher resistivities (between lo3 and lo6 Q) a mechanical chopper system [13] was used which combines the advantages of compensatory measurements with those of ac phase sensitive detection. This is necessary because frequently specimens of high resistance have contacts with slightly unsymmetrical cbaracteristics and therefore produce dc voltages by rectification of r.f.…”

Section: Electrical Measurementsmentioning

confidence: 99%

On the electronic states at dislocations in germanium

Labusch

Schettler

1972

Phys. Stat. Sol. (a)

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Dislocation states in germanium are investigated in a series of deformed specimens with doping concentrations between 1012 acceptors and 1015 donors per cm3. The Fermi energy, EF, and the occupation ratio, f, of the dislocation levels are determined from Hall effect measurements. Possible errors of f are carefully discussed. From this discussion experimental conditions are obtained under which a reliable comparison of the results with theoretical models is possible. For p‐type as well as for n‐type material the results are found to be in quantitative agreement with the model of a partly filled dislocation band. An explanation is given for the discrepancies between previous results of different authors.

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Apparatus for Measuring Resistivity and Hall Coefficient of Semiconductors

Cited by 78 publications

References 2 publications

Measurement of the electrical resistivity and Hall coefficient at high temperatures

Measurement of the electrical resistivity and Hall coefficient at high temperatures

Use of Hall Measurements in Evaluating Polycrystalline Silicon

On the electronic states at dislocations in germanium

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