Antiphase Method of the CMOS Power Amplifier Using PMOS Driver Stage to Enhance Linearity

Kim, Jiwon; Lee, Changhyun; Yoo, Jinho; Park, Changkun

doi:10.3390/electronics9010103

Cited by 3 publications

(1 citation statement)

References 24 publications

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“…For PA linearity, static biasing and dynamic biasing can be optimized to ensure flat AM-AM linearity. In CMOS PAs, using NMOS and PMOS to compensate for the device AM-PM nonlinearity has been a common practice, while for multistage PAs, using drivers and output stages for nonlinearity compensation is also widely exercised [144], [145].…”

Section: Dbm Saturated Power and 25 Db Gain At 60 Ghzmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

124

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: Dbm Saturated Power and 25 Db Gain At 60 Ghzmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

124

View full text Add to dashboard Cite

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Design of K-Band Power Amplifier with 180-Degree Phase- Shift Function Using Low-Power CMOS Process

Jang

Lee

Lee³

et al. 2023

Applied Sciences

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In this study, a K-band complementary metal oxide semiconductor (CMOS) power amplifier was designed using a low-power (LP) process to improve the integration of the beamforming system. In order to reduce the overall system size, a 180° phase-shift function was mounted. It was designed in a four-stage structure to secure sufficient gain. In addition, we propose a way to secure wideband characteristics by utilizing the gains of each of the four stages. The power amplifier was designed with a 40-nm LP CMOS process to verify the feasibility of the proposed technique. The measured P1dB for 0° and 180° phase-shift modes were 15.25 dBm and 14.30 dBm, respectively, at the operating frequency of 25.0 GHz. The measured phase difference between the two modes was 217° at the 25.0 GHz.

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Design-Aware Parasitic-Aware Simulation Based Automation and Optimization of Highly Linear RF CMOS Power Amplifiers

2023

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In this paper, a parasitic-design-aware simulation-based design tool is proposed for highly linear RF power amplifiers. The main aim of the proposed tool is to speed up the design process of RF power amplifiers. In addition, it provides accurate final designs taking into consideration the effect of parasitic components of both active and passive devices. The proposed tool relies on the knowledge of designing highly linear RF power amplifiers. Both the optimization steps and design methodology are presented in this paper. The proposed tool is verified by designing a highly linear RF power amplifier at three different frequencies (7 GHz, 10 GHz, and 13 GHz) using 65 nm technology node. The results show that an OP1 dB higher than 18 dBm, gain/S21 higher than 7 dB, and OIP3 higher than 24 dBm at 6 dB back-off power can be obtained.

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Antiphase Method of the CMOS Power Amplifier Using PMOS Driver Stage to Enhance Linearity

Cited by 3 publications

References 24 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Design of K-Band Power Amplifier with 180-Degree Phase- Shift Function Using Low-Power CMOS Process

Design-Aware Parasitic-Aware Simulation Based Automation and Optimization of Highly Linear RF CMOS Power Amplifiers

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